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58K9431

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RF Bipolar Transistor; Power Dissipation:0.35W; C-E Breakdown Voltage:40V; DC Current Gain Min (hfe):30; Collector Current:0.2A; Package/Case:SOT-23; DC Current Gain Max (hfe):300; Leaded Process Compatible:Yes RoHS Compliant: Yes

Specifications

General Specifications
Transistor Type / Technology	Bipolar RF
Polarity	N-Channel
Packaging Characteristics
Package Type	SOT23; SOT-23
Performance
Power Gain	30.00 dB

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