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45J2285

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RF Bipolar Transistor; Power Dissipation:40W; C-E Breakdown Voltage:-100V; DC Current Gain Min (hfe):10; Collector Current:3A; Package/Case:TO-220AB; DC Current Gain Max (hfe):50; Leaded Process Compatible:Yes RoHS Compliant: Yes

Specifications

General Specifications
Transistor Type / Technology	Bipolar RF
Polarity	P-Channel
Packaging Characteristics
Package Type	TO-220; TO-220AB
Performance
Power Gain	10.00 dB

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