Go to GlobalSpec.com Home
View Company Profile
Contact Newark
For More Information

58K1544

Print Print

View Larger

RF Bipolar Transistor; Power Dissipation:2W; C-E Breakdown Voltage:25V; DC Current Gain Min (hfe):15; Collector Current:3.0A; Package/Case:SOT-223; DC Current Gain Max (hfe):300; Leaded Process Compatible:Yes RoHS Compliant: Yes

Specifications

General Specifications
Transistor Type / Technology Bipolar RF
Polarity N-Channel
Packaging Characteristics
Package Type SOT223; SOT-223
Performance
Power Gain 15.00 dB
Request a Quote


Part Saved

You've successfully added from to your part list.

Save part

Part Name / #:
Product Type:
Description:
Cancel