Go to GlobalSpec.com Home
View Company Profile
Contact Newark
For More Information

89K0814

Print Print

View Larger

Bipolar Transistor; Collector Emitter Voltage, Vceo:300V; DC Current Gain Min (hfe):30; Collector Current:0.5A; Collector Current @ hfe:0.05uA; DC Current Gain Max (hfe):240; Leaded Process Compatible:Yes; Number of Pins:3 RoHS Compliant: Yes

Specifications

General Specifications
Transistor Type / Technology Bipolar RF
Polarity N-Channel; P-Channel
Performance
Power Gain 30.00 dB
Request a Quote


Part Saved

You've successfully added from to your part list.

Save part

Part Name / #:
Product Type:
Description:
Cancel