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Bipolar Transistor; Power Dissipation:150W; C-E Breakdown Voltage:60V; DC Current Gain Min (hfe):5; Collector Current:20A; Package/Case:TO-3; DC Current Gain Max (hfe):60; Leaded Process Compatible:Yes RoHS Compliant: Yes
| General Specifications | |
| Transistor Type / Technology | Bipolar RF |
| Polarity | N-Channel |
| Packaging Characteristics | |
| Package Type | TO-3; TO-3 |
| Performance | |
| Power Gain | 5.00 dB |