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19M1048

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Matched BJT; Collector Emitter Voltage, Vceo:40V; C-E Breakdown Voltage:40V; DC Current Gain Min (hfe):605; Package/Case:8-DIP; Current Gain-Bandwidth Typ:200MHz RoHS Compliant: Yes

Specifications

General Specifications
Transistor Type / Technology Bipolar RF
Polarity N-Channel
Packaging Characteristics
Package Type 8-DIP
Performance
Power Gain 605 dB
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