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26K5218

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RF Bipolar Transistor; Power Dissipation:125W; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):15; Collector Current:25A; Package/Case:TO-218; DC Current Gain Max (hfe):75; Leaded Process Compatible:Yes RoHS Compliant: Yes

Specifications

General Specifications
Transistor Type / Technology Bipolar RF
Polarity N-Channel
Packaging Characteristics
Package Type TO-218
Performance
Power Gain 15.00 dB
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