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Bipolar Transistor; Power Dissipation:0.625W; C-E Breakdown Voltage:40V; DC Current Gain Min (hfe):20; Collector Current:0.6A; Package/Case:TO-92; DC Current Gain Max (hfe):300; Leaded Process Compatible:Yes RoHS Compliant: Yes
| General Specifications | |
| Transistor Type / Technology | Bipolar RF |
| Polarity | N-Channel |
| Packaging Characteristics | |
| Package Type | TO-92; TO-92 |
| Performance | |
| Power Gain | 20.00 dB |