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RF Bipolar Transistor; Power Dissipation:50W; C-E Breakdown Voltage:80V; DC Current Gain Min (hfe):40; Collector Current:10A; Package/Case:TO-220AB; Leaded Process Compatible:Yes RoHS Compliant: Yes
| General Specifications | |
| Transistor Type / Technology | Bipolar RF |
| Polarity | N-Channel |
| Packaging Characteristics | |
| Package Type | TO-220; TO-220AB |
| Performance | |
| Power Gain | 40.00 dB |