Go to GlobalSpec.com Home
For More Information

26K3585

Print Print

RF Bipolar Transistor; Power Dissipation:50W; C-E Breakdown Voltage:80V; DC Current Gain Min (hfe):40; Collector Current:10A; Package/Case:TO-220AB; Leaded Process Compatible:Yes RoHS Compliant: Yes

Specifications

General Specifications
Transistor Type / Technology Bipolar RF
Polarity N-Channel
Packaging Characteristics
Package Type TO-220; TO-220AB
Performance
Power Gain 40.00 dB
Request a Quote


Part Saved

You've successfully added from to your part list.

Save part

Part Name / #:
Product Type:
Description: