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98H1011

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Bipolar Transistor; Power Dissipation:115W; C-E Breakdown Voltage:60V; DC Current Gain Min (hfe):5; Collector Current:15A; Package/Case:TO-3; DC Current Gain Max (hfe):70; Leaded Process Compatible:Yes RoHS Compliant: Yes

Specifications

General Specifications
Transistor Type / Technology Bipolar RF
Polarity N-Channel
Packaging Characteristics
Package Type TO-3; TO-3
Performance
Power Gain 5.00 dB
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