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Bipolar Transistor; Power Dissipation:0.3W; C-E Breakdown Voltage:-45V; DC Current Gain Min (hfe):40; Collector Current:0.5A; Package/Case:SOT-23; DC Current Gain Max (hfe):400; Leaded Process Compatible:Yes RoHS Compliant: Yes
| General Specifications | |
| Transistor Type / Technology | Bipolar RF |
| Polarity | P-Channel |
| Packaging Characteristics | |
| Package Type | SOT23; SOT-23 |
| Performance | |
| Power Gain | 40.00 dB |