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26K4449

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NPN Transistor; Collector Emitter Voltage, Vceo:120V; Power Dissipation:50W; C-E Breakdown Voltage:120V; DC Current Gain Min (hfe):40; Collector Current:8A; Package/Case:TO-220AB; Collector Current @ hfe:4mA RoHS Compliant: Yes

Specifications

General Specifications
Transistor Type / Technology	Bipolar RF
Polarity	NPN
Packaging Characteristics
Package Type	TO-220; TO-220AB
Performance
Power Gain	40.00 dB

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