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83H6425

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Bipolar Transistor; Power Dissipation:0.3W; C-E Breakdown Voltage:32V; DC Current Gain Min (hfe):200; Collector Current:0.1A; Package/Case:SOT-23; DC Current Gain Max (hfe):450; Leaded Process Compatible:Yes RoHS Compliant: Yes

Specifications

General Specifications
Transistor Type / Technology Bipolar RF
Polarity N-Channel
Packaging Characteristics
Package Type SOT23; SOT-23
Performance
Power Gain 200 dB
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