Go to GlobalSpec.com Home
View Company Profile
Contact Newark
For More Information

26K4452

Print Print

View Larger

NPN Transistor; Collector Emitter Voltage, Vceo:350V; Power Dissipation:50W; C-E Breakdown Voltage:350V; DC Current Gain Min (hfe):100; Collector Current:8A; Package/Case:TO-220AB; Leaded Process Compatible:Yes RoHS Compliant: Yes

Specifications

General Specifications
Transistor Type / Technology Bipolar RF
Polarity NPN
Packaging Characteristics
Package Type TO-220; TO-220AB
Performance
Power Gain 100 dB
Request a Quote


Part Saved

You've successfully added from to your part list.

Save part

Part Name / #:
Product Type:
Description:
Cancel