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Bipolar Transistor; Power Dissipation:200W; C-E Breakdown Voltage:-200V; DC Current Gain Min (hfe):12; Collector Current:15A; Package/Case:TO-264; DC Current Gain Max (hfe):175; Leaded Process Compatible:Yes RoHS Compliant: Yes
| General Specifications | |
| Transistor Type / Technology | Bipolar RF |
| Polarity | P-Channel |
| Packaging Characteristics | |
| Package Type | TO-264 |
| Performance | |
| Power Gain | 12.00 dB |