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71J3443

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RF Bipolar Transistor; Power Dissipation:60W; C-E Breakdown Voltage:150V; DC Current Gain Min (hfe):15; Collector Current:7A; Package/Case:TO-220AB; DC Current Gain Max (hfe):70; Leaded Process Compatible:Yes RoHS Compliant: Yes

Specifications

Packaging Characteristics
Package Type TO-220; TO-220AB
Performance
IC(max) 7000 milliamps
VCEO 150 volts
Power Gain 15.00 dB
PD  


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