|
||
RF Bipolar Transistor; Power Dissipation:40W; C-E Breakdown Voltage:-100V; DC Current Gain Min (hfe):10; Collector Current:3A; Package/Case:TO-220AB; DC Current Gain Max (hfe):50; Leaded Process Compatible:Yes RoHS Compliant: Yes
| Packaging Characteristics | |
| Package Type | TO-220; TO-220AB |
| Performance | |
| IC(max) | 3000 milliamps |
| VCEO | -100 volts |
| Power Gain | 10.00 dB |
| PD |