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TriQuint Semiconductor, Inc. Data Sheets for Transistors

TriQuint Semiconductor, Inc.
Address: 2300 NE Brookwood Parkway
Hillsboro, OR 97124
 Contact: Web site
E-mail

Phone:  (503) 615-9000
Fax: (503) 615-8900

Transistors:

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.

Transistors: Learn more

Product Name
Notes
18 mm Discrete HFET -- TGF4118-EPU 0.5 um gate finger length & die Size 0.914 x 2.057 x 0.102 mm
12 mm Discrete HFET -- TGF4112-EPU 0.5 um gate finger length & die size 0.8330 x 1.804 x 0.1016 mm
24 mm Discrete HFET -- TGF4124-EPU 0.5 um gate finger length & die size 0.914 x 2.057 x 0.102 mm
2.4 mm Discrete HFET -- TGF4240-SCC 0.6 x 1 x 0.1 mm HFET which is suitable for high reliability applications
DC-10.5 GHz Discrete HFET -- TGF4250-SCC 4800 ¦m x 0.5 ¦m HFET which is suitable for high reliability applications
TGF2023-10, TGF2023-20 55% Maximum PAE, Discrete 10 mm GaN on SIC HEMT
6 Watt Discrete Power GaN on SiC HEMT -- TGF2023-01 55% Maximum PAE, Discrete 125 mm GaN on SIC HEMT
TGF2023-02 55% Maximum PAE, Discrete 2.5 mm GaN on SIC HEMT
TGF2023-05 55% Maximum PAE, Discrete 5 mm GaN on SIC HEMT
9.6 mm Discrete HFET -- TGF4260-SCC 9600 ¦m x 0.5 ¦m HFET which is suitable for high reliability applications
DC - 12 GHz Discrete HFET -- TGF4230-SCC A 1200 ¦m HFET with a nominal PAE of 55 % at 8.5 GHz
Discrete MESFET -- TGF1350-SCC All-gold metallization for high reliability recessed gate structure
PD25025F Application specific performance, 2.5 GHz
PD27025F (27025) Application specific performance, 2.7 GHz
1 Watt DC-4 GHz Packaged HFET -- TGF2961-SD Cellular base stations, WiMAX, wireless infrastructure, IF & LO Buffer apps
AGR09045E (09045), AGR19045E (19045) High gain, efficiency, and linearity
AGR19030E (19030) High gain, efficiency, and linearity, integrated ESD protection
Discrete Transistor -- TGF2960-SD High linearity packaged HFET
AGR09030E (09030), AGR09070E (09070), AGR09085E (09085), AGR09090E (09090), AGR09130E (09130), AGR09180E (09180), AGR18045E (18045), AGR18060E (18060), AGR18090E (18090), AGR18125E (18125), AGR19060E (19060), AGR19090E (19090), AGR19125E (19125), AGR19180E (19180), AGR21060E (21060), AGR21090E (21090), AGR21125E (21125), AGR21180 (21180), AGR26125E (26125), AGR26125EF (26125), AGR26180EF (26180), PD21120R6 (211206), PDL400 (400), PRA1000 (1000), PTF102003 (102003) High-reliability, gold-metalization process
AGR18030E (18030) High-reliability, gold-metallization process
AGR21030E (21030), AGR21045E (21045), AGR26045E (26045) Large signal impedance parameters available
300um Discrete pHEMT -- TGF4350-EPU Low noise floating source configuration
High-Power Packaged GaAs FET -- CLY2, High-Power Packaged GaAs FET -- CLY5 Power amplifiers for WLAN transceivers
DC - 20 GHz Discrete Power pHEMT -- TGF2022-60 Suitable for high reliability applications with 57% maximum PAE
DC - 12 GHz Discrete Power pHEMT -- TGF2021-12, DC - 20 GHz Discrete Power pHEMT -- TGF2022-06, DC - 20 GHz Discrete Power pHEMT -- TGF2022-12, DC - 20 GHz Discrete Power pHEMT -- TGF2022-24, DC - 20 GHz Discrete Power pHEMT -- TGF2022-48 Suitable for high reliability applications with 58% maximum PAE
DC - 12 GHz Discrete Power pHEMT -- TGF2021-01, DC - 12 GHz Discrete Power pHEMT -- TGF2021-02, DC - 12 GHz Discrete Power pHEMT -- TGF2021-04, DC - 12 GHz Discrete Power pHEMT -- TGF2021-08 Suitable for high reliability applications with 59% maximum PAE
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  • Company Description:
    TriQuint Semiconductor, Inc. supplies high-performance modules and components for communications companies. Their diverse markets include wireless handsets, base stations, broadband communications and military products.
    TriQuint provides standard and custom product solutions including a wide... (more)