|
||
MOSFET; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:2A; On-Resistance, Rds(on):80mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:3-SuperSOT; Drain-Source Breakdown Voltage:-30V; Gate-Source Voltage:3V RoHS Compl
| General Specifications | |
| Transistor Type / Technology | MOSFET |
| Polarity | P-Channel |
| Packaging Characteristics | |
| Package Type | 3-SuperSOT |