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American Microsemiconductor, Inc. Data Sheets for Transistors

American Microsemiconductor, Inc.
Address: 133 Kings Road
PO Box 104
Madison, NJ 07940-0104
 Contact: Web site
E-mail

Phone:  (973) 377-9566
Fax: (973) 377-3078

Transistors:

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.

Transistors: Learn more
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Product Name
Notes
2C5836HV Bipolar PNP UHF/Microwave Transisitor, Silicon, Transistors
2803(MIL) Building Block Transistor Array, Transistors
10, 12C101, 12C102, 20 Chopper Transistor, Silicon, Transistors
1DI100E055, 1DI100E100, 1DI100E120, 1DI100F055, 1DI100F100, 1DI100F120, 1DI100H120, 1DI150E055, 1DI150E100, 1DI150E120, 1DI150F055, 1DI150F100, 1DI150F120, 1DI150H055, 1DI150H120, 1DI200E055, 1DI200F055, 1DI200H055, 1DI200K055, 1DI50E055, 1DI50E120, 1DI50F055, 1DI50F100, 1DI50F120, 1DI50H055, 1DI50H120, 1DI50K055, 1DI75E055, 1DI75E100, 1DI75E120, 1DI75F055, 1DI75F100, 1DI75F120, 1DI75H120 Chopper Transistor, Transistors
2ASZ15 Complementary Monolithic Transistor Pair, Germanium, Transistors
2DI200A020, 2DI75S050A Darlington Independent Power Module, Isolated Case, Transistors
2DI100MA050, 2DI150MA050 Darlington Independent Power Module, Transistors
2004(MIL), 2005(MIL), 2801(MIL), 2802(MIL), 2804(MIL) Darlington Transistor Array, Transistors
2N100, 2N1000, 2N1010, 2N1012, 2N103 Ge NPN Lo-Pwr BJT, Transistors
2N102 Ge NPN Power BJT, Transistors
2N1003, 2N1004, 2N1008, 2N1008A, 2N1008B, 2N1009, 2N1017, 2N1018, 2N1023 Ge PNP Lo-Pwr BJT, Transistors
11T1, 12T1, 13T1, 146T1, 147T1, 14T1, 15T1, 16T1, 2C5415, 2C5416, 2G210, 2G220, 2G221, 2G222, 2G223, 2G224, 2G225, 2G226, 2G227, 2G228, 2G229, 2G230, 2G231, 2G240, 2N1007, 2N101, 2N1011, 2N1011+JAN, 2N1013, 2N1014, 2N1021, 2N1021A, 2N1021A+JAN, 2N1022, 2N1022A, 2N1022A+JAN, 2N1029, 2N1029A, 2N1029B, 2N1029C, 2N1030, 2N1030A, 2N1030B, 2N1030C, 2N1031 Ge PNP Power BJT, Transistors
2MBI100F060, 2MBI100F120, 2MBI100J060, 2MBI100J120, 2MBI100L060, 2MBI100L120, 2MBI150F060, 2MBI150F120, 2MBI150J060, 2MBI150J120, 2MBI150L060, 2MBI150L120, 2MBI150LB060, 2MBI200F060, 2MBI200J060, 2MBI200J120, 2MBI200L060, 2MBI200L120, 2MBI200LB060, 2MBI25F120, 2MBI25L120, 2MBI300F060, 2MBI300J060, 2MBI300L060, 2MBI300LB060, 2MBI50F060, 2MBI50F120, 2MBI50J060, 2MBI50L060, 2MBI50L120, 2MBI75F060, 2MBI75F120, 2MBI75J060, 2MBI75J120, 2MBI75L060, 2MBI75L120 Half Bridge IGBT Power Module, Isolated Case, Transistors
2MBI100-060, 2MBI100-120, 2MBI150-060, 2MBI150-120, 2MBI200-060, 2MBI25-120, 2MBI300-060, 2MBI50-060, 2MBI50-120, 2MBI75-060, 2MBI75-120 Half Bridge IGBT Power Module, Transistors
1MB12-140, 1MBH50-090, 1MBH60-100, 1MBI100FE060, 1MBI200F120, 1MBI200L120, 1MBI200N120, 1MBI25FE120, 1MBI300F060, 1MBI300F120, 1MBI300JN120, 1MBI300JP120, 1MBI300L060, 1MBI300L120, 1MBI300N120, 1MBI300NN120, 1MBI300NP120, 1MBI400F060, 1MBI400L060, 1MBI400L120, 1MBI400N120, 1MBI400NN120, 1MBI400NP120, 1MBI50FE060, 1MBI50FE120, 1MBI600LN060, 1MBI600LP060, 1MBI600NN060, 1MBI600NP060, 1MBI750LN060, 1MBI750LP060, 1MBI75FE060, 2MBI100N060, 2MBI100N120, 2MBI100NB120, 2MBI150N060, 2MBI150N120, 2MBI150NB120, 2MBI150NC060, 2MBI200N060, 2MBI200N120, 2MBI300N060, 2MBI300NB060, 2MBI400L060, 2MBI400N060, 2MBI50N060, 2MBI50N120, 2MBI75N060, 2MBI75N120 Independent IGBT Power Module, Isolated Case, Transistors
1MBI200-120, 1MBI300-120, 1MBI400-060 Independent IGBT Power Module, Transistors
286-1BFY N-Channel Depletion MOSFET, Transistors
1N7334, 1N7335, 1N7336 N-Channel Enhancement Mode MOSFET Array, Transistors
16G020F, 16G020L, 16G020L36, 16G020X, 16G021F, 16G021L, 16G021L36, 16G021X N-Channel UHF/Microwave MESFET Array, Transistors
2C6059HV NPN Darlington Transistor, Silicon, Transistors
2C6052HV PNP Darlington Transistor, Silicon, Transistors
2N0918, 2N1005, 2N1006 Si NPN Lo-Pwr BJT, Transistors
2N1015, 2N1015A, 2N1015B, 2N1015C, 2N1015D, 2N1015E, 2N1015F, 2N1016, 2N1016A, 2N1016B, 2N1016B+JAN, 2N1016B/M, 2N1016C, 2N1016C+JAN, 2N1016C/M, 2N1016D, 2N1016D+JAN, 2N1016E, 2N1016F Si NPN Power BJT, Transistors
1N2481, 1N2481+JAN, 1N2481+JANTX Si NPN Power HF BJT, Transistors
2N1019, 2N1020 Special-Purpose Transistor, Germanium, Transistors
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  • Company Description:
    American Microsemiconductor Inc. was incorporated in 1972 and has been supplying semiconductors to major industrial accounts worldwide ever since. Their New Jersey Headquarters serves as their Sales Office, Technical Support Headquarters and
    Corporate
    Management
    Center
    .
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