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Memory Type
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Your choices are...
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DRAM Chip
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Dynamic RAM (DRAM) stores each bit of data in a separate capacitor. DRAM derives its name from the fact that it must be refreshed periodically. Because of the way in which the memory cells are constructed, the reading action refreshes the contents of the memory. DRAM loses its data when the power supply is removed.
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DRAM Module
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DRAM modules are collections of DRAM cells assembled on a circuit board.
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SRAM Chip
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Static RAM (SRAM) is more expensive than DRAM, but faster and more reliable. Unlike DRAM, SRAM does not need to be refreshed constantly; SRAM is refreshed only when a write command is performed. SRAM is most commonly used in the L2 cache for PCs. There are two types of SRAM: synchronous and asynchronous. Synchronous RAM is synchronized with the system clock. Asynchronous RAM is not.
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SRAM Module
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SRAM modules are collections of SRAM cells assembled on a circuit board.
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FIFO
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First in, first out (FIFO) memory is used in buffering applications between devices that operate at different speeds, or in applications where data must be temporarily stored for further processing.
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Flash
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Flash is a form of electrically erasable, programmable, read-only memory (EEPROM) that can be erased and reprogrammed in blocks instead of one byte at a time. Flash memory is non-volatile, which means that it does not need a constant power supply in order to retain data. Flash offers extremely fast access times, low power consumption, and relative immunity to severe shock or vibration. Flash memory chips have a lifespan of approximately 100,000 write cycles - a fact that makes Flash unsuitable for use as computer main memory. Typically, Flash memory chips are used in portable or compact devices such as digital cameras, cell phones, pagers, and scanners. Flash memory chips are also used as solid-state disks in laptops and as memory cards for video game consoles.
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PROM
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Programmable ROM (PROM) can be written to only once, after which the contents are unchangeable.
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EPROM
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Erasable programmable read-only memory (EPROM) is a type of PROM that can be erased through exposure to ultraviolet light and then reprogrammed.
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EEPROM
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Electrically erasable programmable read-only memory (EEPROM) is a type of PROM that can be erased electrically and then reprogrammed.
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MASK ROM
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MASK ROM is a type of read-only memory (ROM) that can be programmed only once. Manufacturers that produce high volumes of semiconductors often use MASK ROM because it is the most cost-effective ROM available.
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NVRAM
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Non-volatile RAM (NVRAM) is a type of RAM that retains data when power is removed.
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FRAM
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Ramtron’s ferroelectrics random access memory (FRAM) is a new generation of nonvolatile memory that combines high-performance and low-power operation with the ability to retain data without power. FRAM has the fast read/write speed and low power of battery-backed SRAM and eliminates the need for a battery. EEPROM and Flash require long write times, wear out after being written a small number of times, and use a large amount of power to write data. FRAM writes instantly, has virtually unlimited endurance, and requires very little write power.
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NVSRAM
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Non-volatile static random access memory (nvSRAM).
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Other
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Other unlisted memory types.
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Search Logic:
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All products with ANY of the selected attributes will be returned as matches. Leaving all boxes unchecked will not limit the search criteria for this question; products with all attribute options will be returned as matches.
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Density
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The capacity of the memory chip expressed in bits.
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Search Logic:
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All matching products will have a value greater than or equal to the specified value.
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Number of Words
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The number of "rows" in the organization of the memory chip. Each row stores a memory word and connects to a word line (one line of the memory bus) for addressing purposes.
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Search Logic:
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User may specify either, both, or neither of the "At Least" and "No More Than" values. Products returned as matches will meet all specified criteria.
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Bits per Word
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The number of "columns" in the organization of the memory chip. Each column connects to a sense / write circuit (a bit), which connects to data input/output lines of the chip.
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Search Logic:
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User may specify either, both, or neither of the "At Least" and "No More Than" values. Products returned as matches will meet all specified criteria.
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IC Package Type
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Your choices are...
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BGA
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Ball-grid array (BGA) places output pins in a solder ball matrix. Generally, BGA traces are fabricated on laminated (BT-based) substrates or polyimide-based films. Therefore, the entire area of substrates or films can be used to route the interconnection. BGA has another advantage of lower ground or power inductance by assigning ground or power nets via a shorter current path to PCB. Thermally enhanced mechanisms (heat sink, thermal balls, etc.) can be applied to BGA to reduce the thermal resistance. The sophisticated capabilities make BGA the desirable package to implement electrical and thermal enhancement in response to the need for high power and high speed ICs.
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CSP
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Chip scale package or chip size package (CSP) has an area that is no more than 20% larger than the built-in die. CSP is compact for second level packaging efficiency and encapsulated for second level reliability. CSP is superior to both direct-chip-attach (DCA) and chip-on-board (COB) technologies. CSP is used in a variety of integrated circuits (IC), including radio frequency ICs (RFIC), memory ICs, and communication ICs.
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FLGA
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Fine-pitch land-grid array (FLGA) is extremely compact and lightweight, making it suitable for miniature disc drives and digital cameras.
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QFP
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Quad flat packages (QFP) contain a large number of fine, flexible, gull wing shaped leads. Lead width can be as small as 0.16 mm. Lead pitch is 0.4 mm. QFPs provide good second-level reliability and are used in processors, controllers, ASICs, DSPs, gate arrays, logic, memory ICs, PC chipsets, and other applications.
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LQFP
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Low quad flat package (LQFP).
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TQFP
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Thin quad flat package (TQFP).
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SOP
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Small outline package (SOP).
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SOIC
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Small outline integrated circuit (SOIC).
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TSOP
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Thin small outline package (TSOP) is a type of DRAM package that uses gull wing shaped leads on both sides. TSOP DRAM mounts directly on the surface of the printed circuit board. The advantage of the TSOP package is that it is one-third the thickness of an SOJ package. TSOP components are commonly used in small outline DIMM and credit card memory applications. Thin small outline package may be Type I or Type II.
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SSOP
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Shrink small outline package (SSOP).
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TSSOP
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Thin shrink small outline L-leaded package (TSSOP).
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TVSOP
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Thin very small outline package (TVSOP).
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SOJ
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Small outline J-lead (SOJ) is a common form of surface-mount DRAM packaging. It is a rectangular package with J-shaped leads on the two long sides of the device.
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HSOF
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Small outline flat-leaded package with heat sink (HSOF).
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PLCC
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Plastic leaded chip carrier (PLCC).
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LCCC
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Leadless ceramic chip carrier (LCCC).
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DIP
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Dual in-line package (DIP) is a type of DRAM component packaging. DIPs can be installed either in sockets or permanently soldered into holes extending into the surface of the printed circuit board.
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SIP
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Single in-line package (SIP).
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SDIP
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Shrink dual in-line package (SDIP).
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SZIP
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Shrink zigzag in-line package (SZIP).
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Other
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Other unlisted, specialized, or proprietary IC packages.
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Search Logic:
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Products with the selected attribute will be returned as matches. Leaving or selecting "No Preference" will not limit the search criteria for this question; products with all attribute options will be returned as matches.
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Mounting
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Your choices are...
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Surface Mount Technology (SMT)
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Surface mount technology (SMT) adds components to a printed circuit board (PCB) by soldering component leads or terminals to the top surface of the board. SMT components have a flat surface that is soldered to a flat pad on the face of the PCB. Typically, the PCB pad is coated with a paste-like formulation of solder and flux. With careful placement, SMT components on solder paste remain in position until elevated temperatures, usually from an infrared oven, melt the paste and solder the component leads to the PCB pads.
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Flat Package (FPAK)
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Flat package (FPAK).
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Through Hole Technology (THT)
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Through hole technology (THT) mounts components on a printed circuit board (PCB) by inserting component leads through holes in the board and then soldering the leads in place on the opposite side of the board.
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Socket
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Sockets are board-mounted female connectors that serve as carriers for integrated circuit (IC) chips. They provide insulation and are often available in terminal blocks.
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Other
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Other unlisted mounting types.
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Search Logic:
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All products with ANY of the selected attributes will be returned as matches. Leaving all boxes unchecked will not limit the search criteria for this question; products with all attribute options will be returned as matches.
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Logic Family
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Your choices are...
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L
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Low power (L).
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S
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Schottky (S).
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H
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High speed (H).
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LS
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Low power Schottky (LS).
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AS
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Advanced Schottky (AS).
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ALS
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Advanced low power Schottky (ALS).
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FAST
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Fairchild advanced Schottky TTL (FAST) technology was created in late 1970 when advances in IC technology allowed the speed and drive of S-TTL to be combined with the lower power of LS-TTL to form a new logic. An advanced related family is the FASTr, which is faster then FAST, has a higher driving capability (IOL, IOH), and produces much lower noise. The “r” in FASTr refers to the various speed grades, such as A, B and C, where an “A” designation means low speed and “C” means high speed.
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High-Speed CMOS
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High-speed CMOS technology (HCMOS) is also known as HC / HCT. There are several basic flavors of HCMOS technology: high-speed CMOS (HC), high-speed CMOS with TTL input (HCT), advanced high-speed CMOS (AHC), and advanced high-speed CMOS with TTL inputs (AHCT).
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HCT
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High-speed CMOS with TTL inputs (HCT).
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AHC
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Advanced high-speed CMOS (AHC).
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AHCT
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Advanced high-speed CMOS with TTL inputs (AHCT).
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Fast CMOS
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Fast CMOS technology (FCT) was introduced in 1986. With this technology the speed gap between CMOS and TTL was closed. Since FCT is the CMOS version of FAST, it has the low power consumption of CMOS but speed comparable with TTL. Advanced versions of the FCT standard are FCTx and FCTx-T. The x in FCTx and FCTx-T refers to the various speed grades, such as A, B and C, where an “A” designation means low speed and “C” means high speed.
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Advanced CMOS
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Advanced CMOS is a much higher speed version of HCMOS. It is also known as AC / ACT. Advanced CMOS technology comes in different flavors: standard advanced CMOS (AC), advanced CMOS with TTL inputs (ACT), advanced CMOS with quiet outputs (ACQ), advanced CMOS with TTL inputs and quiet outputs (ACTQ), advanced ultra-Low voltage CMOS (AUC), advanced ultra-low power CMOS (AUP), advanced very-low voltage CMOS (AVC), advanced low voltage HCMOS (ALVC), and advanced low voltage CMOS with bus hold (ALVCH). ACQ / ACTQ are second generation Advanced CMOS with much lower noise. While ACQ has the CMOS input level, ACQT is equipped with TTL level input.
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ACT
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Advanced CMOS with TTL inputs (ACT).
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ACQ
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Advanced CMOS with quiet outputs (ACQ).
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ABT
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Advanced BiCMOS technology (ABT).
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ABTE
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Advanced BiCMOS technology with enhanced transceiver logic (ABTE).
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ABTH
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Advanced BiCMOS technology with bus hold (ABTH).
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BCT
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BiCMOS with TTL inputs (BCT).
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BTL
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BiCMOS with backplane and transceiver logic (BTL).
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Crossbar Technology (CBT)
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Crossbar technology (CBT) enables a bus interface to function as a very fast bus switch, isolating the bus when the switch is open and offering very little delay when the switch is closed. Opening the switch provides circuit isolation (high impedance). Closing the switch provides a near-zero propagation delay through a 5-Ohm resistance. Bus switch technology is used in programmable logic devices (PLDs) for improved performance. Typically, CBT devices operate from 4.5 V to 5.0 V. CBT is also known as quick switch (QS), fast switch technology (FST), or Pericom Interface (PI5C).
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Futurebus (FB)
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Futurebus (FB) and Futurebus+ are back-plane bus specifications that define both the physical and electrical layers. Both bus types can use either asynchronous or synchronized protocols. When operating with 256 bit transfers, the data rate may be as high as 3200MBps. Futurebus bus widths start at 32 bits wide, while Futherbus+ may have widths may up to 256 bits. Bus widths of 32, 64,128 and 256 are possible at a clock rate of 100MHz. Futurebus card size is defined as 300mm x 300mm, and uses 2mm style connectors.
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Gunning Transceiver Logic (GTL)
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Gunning transceiver logic (GTL) is a standard for electrical signals in CMOS circuits that is used to provide high data transfer speeds with small voltage swings.
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GTLP
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Gunning with transceiver logic plus (GTLP).
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ALB
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Advanced low voltage BiCMOS (ALB).
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LV
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Standard low voltage CMOS (LV).
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LVC
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Low voltage high performance HCMOS (LVC).
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LVCH
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Low voltage CMOS with bus hold (LVCH).
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ALVC
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Advanced low voltage CMOS (ALVC).
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LVT
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Low voltage CMOS technology with TTL inputs (LVT).
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LVTZ
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Low voltage CMOS technology with TTL inputs and high impedance (LVTZ).
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ALVCH
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Advanced low voltage CMOS with bus hold (ALVCH).
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LCX
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Low voltage CMOS (LCX) operates with 3 V or 5 V.
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VCX
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Low voltage CMOS (VCX) that operates with 1.8 V or 3.6 V.
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CBTLV
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Low-voltage CBT (CBTLV) features simple N-channel and P-channel metal-oxide semiconductor (MOS) transistors optimized for 3.3 V operation while maintaining low propagation delays and low current supply.
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CMOS 4000
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CMOS 4000 refers to the 4000 series that is true CMOS with non-TTL levels.
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Emitter Coupled Logic (ECL)
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Emitter coupled logic (ECL) uses transistors to steer current through gates that compute logical functions. By comparison, TTL and related families use transistors as digital switches, where the transistors are either cut off or saturated, depending on the state of the circuit. This distinction explains ECL's chief advantage: that because the transistors are always in the active region, they can change state very rapidly, so ECL circuits can operate at very high speed; and also its major disadvantage: the transistors are continually drawing current, which means the circuits require high power, and thus generate large amounts of waste heat. ECL gates use differential amplifier configurations at the input stage. A bias configuration supplies a constant voltage at the midrange of the low and high logic levels to the differential amplifier, so that the appropriate logical function of the input voltages will control the amplifier and the base of the output transistor. The propagation time for this arrangement can be less than a nanosecond. Other noteworthy characteristics of the ECL family include the fact that the large current requirement is approximately constant, and does not depend significantly on the state of the circuit. This means that ECL circuits generate relatively little power noise, unlike many other logic types that typically draw far more current when switching than quiescent, for which power noise can become problematic. ECL circuits operate with negative power supplies, and logic levels incompatible with other families, which means that interoperation between ECL and other designs are difficult. The fact that the high and low logic levels are relatively close mean that ECL suffers from small noise margins, which can be troublesome in some circumstances.
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Transistor-Transistor Logic (TTL)
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Transistor-transistor logic (TTL) is a class of digital circuits built from bipolar junction transistors (BJT), diodes and resistors. It is notable, as it was the base for the first widespread semiconductor integrated circuit (IC) technology. All TTL circuits operate with a 5 V power supply. TTL signals are defined as "low" or L when between 0 V and 0.8 V with respect to the ground terminal, and "high" or H when between 2 V and 5 V.
The first logic devices designed from bipolar transistors were referred to as standard TTL. The addition of Schottky diodes to the base collector of bipolar transistor was called Schottky logic (S-TTL). Schottky diodes shorten propagation delays within TTL by preventing the collector from going into what is called “deep saturation.” Other TTL technologies include low-power Schottky (LS-TTL), advanced Schottky (AS-TTL), advanced low-power Schottky (ALS-TTL), and low-voltage TTL (LVTTL).
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Other
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Other unlisted or proprietary logic families.
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Search Logic:
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Products with the selected attribute will be returned as matches. Leaving or selecting "No Preference" will not limit the search criteria for this question; products with all attribute options will be returned as matches.
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Supply Voltage:
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Your choices are...
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-5 V
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The chip operates with -5 volts.
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-4.5 V
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The chip operates with -4.5 volts.
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-3.3 V
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The chip operates with -3.3 volts.
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-3 V
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The chip operates with -3 volts.
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1.2 V
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The chip operates with 1.2 volts.
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1.5 V
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The chip operates with 1.5 volts.
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1.8 V
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The chip operates with 1.8 volts.
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2.5 V
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The chip operates with 2.5 volts.
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2.7 V
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The chip operates with 2.7 volts.
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3 V
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The chip operates with 3 volts.
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3.3 V
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The chip operates with 3.3 volts.
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3.6 V
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The chip operates with 3.6 volts.
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5 V
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The chip operates with 5 volts.
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Other
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Other unlisted supply voltages.
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Search Logic:
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All products with ANY of the selected attributes will be returned as matches. Leaving all boxes unchecked will not limit the search criteria for this question; products with all attribute options will be returned as matches.
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Operating Current
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The minimum current needed for active chip operation.
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Search Logic:
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All matching products will have a value less than or equal to the specified value.
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Standby Current
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The minimum current needed for the operation of the chip while it is inactive.
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Search Logic:
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All matching products will have a value less than or equal to the specified value.
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Power Dissipation
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Power dissipation is the total power consumption of the device. It is generally expressed in watts or milliwatts.
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Search Logic:
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All matching products will have a value less than or equal to the specified value.
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Bandwidth
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The capacity to move data on an electronic line such as a bus or a channel. In short, the amount of data moved relative to a specific time frame. It is expressed in bits, bytes, or hertz (cycles) per second.
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Search Logic:
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All matching products will have a value greater than or equal to the specified value.
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Data Rate
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The transfer speed in hertz. This is the number of bits per second that can be moved internally in the chip.
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Search Logic:
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All matching products will have a value greater than or equal to the specified value.
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Access Time
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A measurement of time in nanoseconds (ns) used to indicate the speed of memory. Access time is a cycle that begins the moment the CPU sends a request to memory and ends the moment the CPU receives the data it requested. Specifically, for a synchronous device it is the time, usually in ns, from a clock edge to when data is available at the output of a device. For an asynchronous device it is the time from the initiation of the read cycle to when the data output is available.
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Search Logic:
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All matching products will have a value less than or equal to the specified value.
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Cycle Time
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Interval of time required to perform a single read or write operation and reset the internal circuitry so another operation can begin. Cycle time defines how much time is required between clock edges in a synchronous device.
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Search Logic:
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All matching products will have a value less than or equal to the specified value.
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Data Retention
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The time (in years) that the memory chip can retain the data without reloading.
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Search Logic:
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All matching products will have a value greater than or equal to the specified value.
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Endurance
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The maximum number of write / read cycles that the chip can support.
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| |
Search Logic:
|
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All matching products will have a value greater than or equal to the specified value.
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Operating Temperature:
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This is the full-required range of ambient operating temperature.
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| |
Search Logic:
|
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User may specify either, both, or neither of the limits in a "From - To" range; when both are specified, matching products will cover entire range. Products returned as matches will meet all specified criteria.
|
|
Part Numbers for Memory Chips
| Part # |
Distributor |
Manufacturer |
Product Category |
Description |
| CMS367130V55 |
AmericanMicroSemi |
AMS
|
Random Access Memory
|
Static RAM with On-Chip Battery |
| DS1745Y70IND |
AmericanMicroSemi |
AMS
|
Random Access Memory
|
Static RAM with On-Chip Battery |
| DS1630Y120 |
AmericanMicroSemi |
AMS
|
Random Access Memory
|
Static RAM with On-Chip Battery |
| M46Z256Y120PM1 |
AmericanMicroSemi |
AMS
|
Random Access Memory
|
Static RAM with On-Chip Battery |
| DS1750YLPM150 |
AmericanMicroSemi |
AMS
|
Random Access Memory
|
Static RAM with On-Chip Battery |
| DS1750YLPM150IND |
AmericanMicroSemi |
AMS
|
Random Access Memory
|
Static RAM with On-Chip Battery |
| MK148Z02B15 |
AmericanMicroSemi |
AMS
|
Random Access Memory
|
Static RAM with On-Chip Battery |
| MM4K67140L35 |
AmericanMicroSemi |
AMS
|
Random Access Memory
|
Static RAM with On-Chip Battery |
| CMS3-67140L45 |
AmericanMicroSemi |
AMS
|
Random Access Memory
|
Static RAM with On-Chip Battery |
| MMRD67140L45 |
AmericanMicroSemi |
AMS
|
Random Access Memory
|
Static RAM with On-Chip Battery |
More >>
|
memory chip,
eeprom chip,
NVSRAM,
MASK ROM,
PROM chip,
FIFO chip,
dynamic RAM chip,
dynamic rams,
static RAM chip,
MASK ROM chip,
NVSRAM chip,
dram storage
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|
|
