About FRAM Memory Chips
FRAM memory chips have memory cells that contain a specific ferroelectric material such as a crystal of zirconium or titanium, or oxygen and lead. FRAM memory chips memory is much faster than Flash memory. Ferroelectric RAM (FeRAM) is a type of non-volatile memory based on electric field orientation and with near-unlimited number (exceeding 1010 for 5V devices and even more for 3.3V ones) of write-erase cycles. FRAM memory chips combines the advantages of SRAM in which writing is roughly as fast as reading (70-200 ns), and EPROM non-volatility and in-circuit programmability. Non-volatile FRAM memory offers an optimized, easy-to-use solution for a variety of advanced electronic metering systems, whether metering electricity, water, gas, or heat. FRAM memory chips do not yet offer the bit density of DRAM and SRAM, but they are non-volatile and faster than Flash/EEPROM memory (write times under 100 nanoseconds), and they have very low power requirements.
FRAM memory chips are an array of ferroelectric capacitors, a DRAM with the dielectric layer in the memory capacitors replaced with a thin ferroelectric film, typically made of lead zirconate titanate (PZT). The resulting FRAM memory chips are electrically similar to the capacitors used in a conventional DRAM chip, but the ferroelectric film will retain a electric field even after the charge in the capacitor drains. Depending on the direction of the current flow when the cell is charged, the film will be polarized into one of two directions. FRAM memory technology is compatible with industry standard CMOS manufacturing processes. A ferroelectric thin film is placed over CMOS base layers and sandwiched between two electrodes. Metal interconnect and passivation completes the process. It is possible to make a ferroelectric memory chip using two additional masking steps during normal semiconductor manufacture, leading to the possibility of full integration of FRAM into microcontrollers and other chips. Flash typically requires nine masks. This makes FRAM particularly attractive as an embedded non-volatile memory on microcontrollers, where the simpler process can reduce costs. However, FRAM memory semiconductors used to make FRAM memory chips are not commonly used elsewhere in integrated circuit manufacturing. FRAM memory chips are designed and manufactured to meet most industry specifications.
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Engineering Web: FRAM Memory Chips
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FRAM-Ferroelectric RAM : FUJITSU EMEA ("Fujitsu") today announced the availability of its 2 Megabit (Mbit) FRAM memory chips, the largest capacity FRAM in volume production in the world. See Fujitsu Limited Information |
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Fujitsu Starts Volume Production of 2 Mbit FRAM Chips :... its 2 Megabit (Mbit) FRAM(1) memory chips, the largest capacity FRAM in volume production in the world (2) . The two FRAM memory products, MB85R2001 See Fujitsu Limited Information |
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Ramtron International | F-RAM & Semiconductor Corporation WM710xx product line features passive UHF EPC Gen-2, high-density F-RAM memory transponder ICs with 4-, 8-, and 16-Kilobit user memory densities. See Ramtron International Corporation Information |
