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About Small-signal Bipolar Transistors (BJT)
Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. With small-signal bipolar transistors, there are two polarities available: PNP and NPN. PNP devices consist of an n-type layer sandwiched between two p-type layers. NPN devices consist of a p-type layer sandwiched between two n-type layers. In both arrangements, the junctions between layers amplify weak incoming signals and the current flow between the emitter and the base controls the current flow between the emitter and the collector. Based on this design, even a small current between the base and emitter connections results in a large current between the emitter and collector connections. In circuits that use small-signal bipolar transistors as switching devices, current in the base-emitter junction creates a low-resistance path between the collector and the emitter.
Performance specifications for small-signal bipolar transistors (BJT) include collector-to-emitter breakdown voltage, collector-to-base breakdown voltage, maximum collector current, current gain bandwidth, and temperature range. Static forward current transfer ratio, which is also known as common-emitter current gain, is the ratio of the input DC current and the output DC current. Power dissipation, the total power consumption of the device, is usually measured in watts (W) or milliwatts (mW). Temperature range for small-signal bipolar transistors is measured in degrees Fahrenheit or degrees Celsius.
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