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About RF MOSFET Transistors
RF MOSFET transistors are metal-oxide field effect transistors (MOSFETs) that are designed to handle high-power radio frequency (RF) signals from devices such as stereo amplifiers, radio transmitters, and television monitors. They are turned on and off by input voltages and function as miniature electronic switches. Like other semiconductor devices, RF MOSFET transistors are made of materials such as silicon (Si) or germanium (Ge) and doped with impurities to induce changes in electrical properties. Voltage is applied between the gate and source terminals, modulating the current between the source and drain. Typically, a thin layer of oxide insulation is used to prevent current from flowing between the gate and a conductive channel in the semiconductor substrate. There are two basic types of RF MOSFET transistors: N-channel and P-channel. N-channel devices conduct through electrons. P-channel devices conduct through “holes”. With both types of devices, the polarity of the electric field that controls the current in the channel is determined by the majority of carriers in the channel.
Selecting RF MOSFET transistors requires an analysis of performance specifications. Drain-source breakdown voltage is the maximum drain-to-source voltage before breakdown with the gate grounded. Power gain, a measure of power amplification, is the ratio of output power to input power. Noise figure, a measure of the amount of noise added during normal operation, is the ratio of the signal-to-noise ratio at the input and the signal-to-noise ratio at the output. Both power gain and noise figure are expressed in decibels (dB). Power dissipation, a measure of total power consumption, is expressed in watts (W) or milliwatts (mW). Other performance specifications for RF MOSFET transistors include maximum drain saturation, common-source forward transconductance, operating frequency, and output power. Some bipolar RF MOSFET transistors are suitable for automotive, commercial, or general industrial applications. Others meet U.S. military specifications (MIL-SPEC).
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Part Numbers for RF MOSFET Transistors
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| RF1K49088 | AmericanMicroSemi | AMS | Transistors:MOSFETs and TempFETs:MOSFETs:N-Ch:Enhancement | Transistors:MOSFETs and TempFETs:MOSFETs:N-Ch:Enhancement |
| RF1S70N06 | AmericanMicroSemi | AMS | Transistors:MOSFETs and TempFETs:MOSFETs:N-Ch:Enhancement | Transistors:MOSFETs and TempFETs:MOSFETs:N-Ch:Enhancement |
| RF1S50N06 | AmericanMicroSemi | AMS | Transistors:MOSFETs and TempFETs:MOSFETs:N-Ch:Enhancement | Transistors:MOSFETs and TempFETs:MOSFETs:N-Ch:Enhancement |
| RF1S45N06 | AmericanMicroSemi | AMS | Transistors:MOSFETs and TempFETs:MOSFETs:N-Ch:Enhancement | Transistors:MOSFETs and TempFETs:MOSFETs:N-Ch:Enhancement |
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