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RF Transistors

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About RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Like other semiconductor devices, they are made of materials such as silicon (Si) or germanium (Ge) and doped with impurities to induce changes in electrical properties. There are several basic types of RF transistors. Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. Both NPN and PNP configurations are available. MOSFET RF transistors are metal-oxide field effect transistors (MOSFETs) with a channel made of either an N-type or P-type material. Heterojunction field effect transistors (HFETs) require a negative power supply and are used mainly for driver or power amplification applications. Pseudomorphic high electron mobility transistors (PHEMTs) are used mainly in wireless devices and satellite communication systems. 

Selecting RF transistors requires an analysis of performance specifications. Power gain, a measure of power amplification, is the ratio of output power to input power. Noise figure, a measure of the amount of noise added during normal operation, is the ratio of the signal-to-noise ratio at the input and the signal-to-noise ratio at the output. Both power gain and noise figure are expressed in decibels (dB). Other performance specifications for RF transistors include output power, operating frequency, and operating temperature. Some RF transistors support a temperature range and feature mechanical and electrical specifications that are suitable for commercial or industrial applications. Other devices meet screening levels for military specifications (MIL-SPEC).

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Products & Services Related to RF Transistors

Bipolar RF Transistors
RF bipolar  transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
Insulated Gate Bipolar Transistors (IGBT)
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching).
Metal-oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Power Bipolar Transistors
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals.
Power MOSFET
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
RF MOSFET Transistors
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc.
Small-signal Bipolar Transistors (BJT)
Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type.

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Part Numbers for RF Transistors

Part # Distributor Manufacturer Product Category Description
RF1029 AmericanMicroSemi AMS Transistors:UHF/Microwave Transistors:Bipolar NPN Transistors:UHF/Microwave Transistors:Bipolar NPN
RF1032 AmericanMicroSemi AMS Transistors:UHF/Microwave Transistors:Bipolar NPN Transistors:UHF/Microwave Transistors:Bipolar NPN
RF1030 AmericanMicroSemi AMS Transistors:UHF/Microwave Transistors:Bipolar NPN RF1030 Transistors UHF/Microwave Transistors Bipolar NPN RF1030 is on sale at our online store. Buy it for 29.00 or less. Call 973-377-9566 100% Satisfaction Gauranteed. FREE UPS ground shipping or more. Also get special discount on International or
RF3096 AmericanMicroSemi AMS Transistors:UHF/Microwave Transistors:Bipolar NPN Transistors:UHF/Microwave Transistors:Bipolar NPN
RF3094 AmericanMicroSemi AMS Transistors:UHF/Microwave Transistors:Bipolar NPN Transistors:UHF/Microwave Transistors:Bipolar NPN

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