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About Metal-oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. When voltage is applied to the gate, current flows from the drain to the source. A thin layer of oxide insulation keeps current from flowing between the gate and the channel. There are two basic types of metal-oxide semiconductor FETs: n-channel and p-channel. N-channel devices conduct through electrons. P-channel devices conduct through “holes”. Both types of metal-oxide semiconductor FETs provide significantly higher switching speeds than bipolar transistors. In addition, MOSFETs generate little heat, offer excellent linearity, and provide high efficiency and fast reaction times.
Performance specifications for metal-oxide semiconductor FETs include drain-source breakdown voltage, drain saturation current, gate-source cutoff voltage, common-source forward transconductance, Ohmic resistance, power dissipation, and temperature range. MOSFET operating modes include depletion and enhancement. A MOSFET operating in depletion mode can have its channel decreased or increased by an appropriate gate voltage. A MOSFET operating in enhancement mode can only increased its channel by an appropriate gate voltage.
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Engineering Web: Metaloxide Semiconductor FET MOSFET
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MOSFET - Wikipedia, the free encyclopedia The metal?oxide?semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. |
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High speed measurement of FET V/sub th/ at low I/sub d/ Keywords: high speed technique voltage measurement MOSFET field-effect transistor FET threshold voltage low drain current analog feedback method |
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An SOI-based self-aligned quasi-SOI MOSFET with... An SOI-based self-aligned quasi-SOI MOSFET with π-shaped semiconductor conductive layer |
