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Junction Field-Effect Transistors (JFET)

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About Junction Field-Effect Transistors (JFET)

Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. In an n-channel device, the junction field effect transistor channel contains an n-type semiconductor material, enabling the charges to move along the channel as a negative electron charge. In a p-channel device, the channel contains p-type material causing the charges to move end-to-end as a positive charge. In each type of device, the source puts charges into the JFET conduction channels while the drain removes them.

JFET devices comprise of a gate, drain, and channel source. The gate element of junction field-effect transistors is the main body of the device and may resemble the base of a transistor. The drain element corresponds to an emitter, and the channel source element corresponds to a collector. The JFET structure of these devices has a gate, resembling a solid bar, in the center with two deposits of either the n-type or p-type material dispersed on either side. On a portion of the gate in the middle between the deposits of material is the channel connecting the source and the drain.

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