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Tunnel Diodes

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About Tunnel Diodes

Tunnel diodes are heavily doped P-N diodes in which electron tunneling from the conduction band in the N-type material to the valence band in the P-type region produces a region of negative resistance. This negative-resistance region is the most important area of operation. As the voltage is increased, the current decreases. This feature makes tunneling diodes especially useful in oscillators and radio frequency (RF) applications. There are two basic types of tunnel diodes: standard tunnel diodes and back tunnel diodes. With a back tunnel diode, the peak current is very small or totally suppressed. This causes the device to resemble a conventional PN junction diode. Back diodes have a very small reverse breakdown voltage that produces a very high current. Consequently, conduction is heavier in reverse bias than in forward bias. The terms “back” and “backward” imply this type of conduction.   

Performance specifications for tunnel diodes include peak current, valley current, maximum allowable reverse voltage, forward voltage, maximum permissible power dissipation, terminal capacitance, and junction operating temperature. Peak current is the maximum current and valley current is the minimum current in the tunneling (negative resistance) region. Forward voltage is measured across the diode terminals and results from the flow of current in the forward direction. Power dissipation is determined when tunneling diodes are in the ON state. Terminal capacitance or diode capacitance is measured when the specified reverse voltage and frequency are applied. Junction operating temperature is the range of temperatures over which tunnel diodes are designed to operate.   

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Products & Services Related to Tunnel Diodes

Diode Arrays
Diode arrays are composed of multiple discrete (usually unconnected) diodes on a single silicon chip. Diode arrays are important semiconductor products because they save assembly time and improve reliability over individually packaged diodes. In general, diode arrays use four or more diodes in a single package.
Diodes
Diodes are electronic components that conduct electric current in only one direction, functioning as a one-way valve. Diodes are manufactured using semiconductor materials such as silicon, germanium or selenium and are used as voltage regulators, signal rectifiers, oscillators and signal modulators / demodulators.
High Voltage Diodes
High voltage diodes are designed for use in high-voltage applications.
PIN Diodes
PIN diodes are three-layer semiconductor diodes consisting of an intrinsic layer separating heavily doped P and N layers. The charge stored in the intrinsic layer in conjunction with other diode parameters determines the resistance of the diode at RF and microwave frequencies.
RF Diodes
RF diodes are designed to handle high-power radio frequency (RF) signals in stereo amplifiers, radio transmitters, television monitors, and other RF or microwave devices.
Transient Voltage Suppressor Diodes (TVS)
Transient voltage suppressor (TVS) diodes are designed to limit over-voltages. They can dissipate high amounts of transient power in a short period of time.
Varactor Diodes
Varactor diodes are p-n junction diodes that are designed to act as a voltage controlled capacitance when operated under reverse bias.

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Engineering Web: Tunnel Diodes

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IBM Technical Journals
Negative Resistance Tunnel Diodes in Silicon Carbide Electron Beam Microanalysis of Germanium Tunnel Diodes
IBM Technical Journals
Diodes, tunnel 1964 Design of ACP Tunnel-Diode-Coupled Circuits Negative Resistance Tunnel Diodes in Silicon Carbide
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Part Numbers for Tunnel Diodes

Part # Distributor Manufacturer Product Category Description
TUNNEL DIODE netCOMPONENTS Not Provided Not Provided Not Provided
TUNNEL DIODE netCOMPONENTS Not Provided Not Provided Not Provided
ML914-28-7003 Amazon American Microsemiconductor BISS ML914-28-7003
40573 Amazon American Microsemiconductor BISS 40573

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