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General Purpose Diodes

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About General Purpose Diodes

General purpose diodes are two-terminal electronic components that allow current to flow in only one direction, from an anode (+) to a cathode. These simple semiconductors are PN junctions with a positive or P-region with positive ions and a negative or N-region with negative electrons. Applying voltage to the PN junction causes current to flow in only one direction as electrons from the N-region fill “holes” in the P-region. Typically, general purpose diodes are made of semiconductor materials such as silicon, germanium or selenium. General purpose diodes are often used as voltage regulators; in switching applications; and as signal rectifiers, oscillators, and signal modulators / demodulators.

Performance specifications for general purpose diodes include forward voltage, reverse voltage, reverse current, breakdown voltage, and junction operating temperature. Forward voltage (VF) is the voltage across the diode terminals resulting from the flow of current in the forward direction. Reverse voltage (IF), the current at which the specified voltage is applied, flows through the diode in the direction of lower resistance. Reverse current (IR) or leakage current, the current value at which the specified reverse voltage is applied, measures the current that flows when reverse bias is applied to a semiconductor junction. Breakdown voltage (VBR) is the reverse voltage at which a small increase in voltage results in a sharp rise of reverse current. Junction operating temperature (Tj) is the range of temperatures at which diode are designed to operate.

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Products & Services Related to General Purpose Diodes

Diode Arrays
Diode arrays are composed of multiple discrete (usually unconnected) diodes on a single silicon chip. Diode arrays are important semiconductor products because they save assembly time and improve reliability over individually packaged diodes. In general, diode arrays use four or more diodes in a single package.
High Voltage Diodes
High voltage diodes are designed for use in high-voltage applications.
PIN Diodes
PIN diodes are three-layer semiconductor diodes consisting of an intrinsic layer separating heavily doped P and N layers. The charge stored in the intrinsic layer in conjunction with other diode parameters determines the resistance of the diode at RF and microwave frequencies.
RF Diodes
RF diodes are designed to handle high-power radio frequency (RF) signals in stereo amplifiers, radio transmitters, television monitors, and other RF or microwave devices.
Transient Voltage Suppressor Diodes (TVS)
Transient voltage suppressor (TVS) diodes are designed to limit over-voltages. They can dissipate high amounts of transient power in a short period of time.
Tunnel Diodes
Tunnel diodes are heavily doped P-N diodes in which electron tunneling from the conduction band in the N-type material to the valence band in the P-type region produces a region of negative resistance. This negative-resistance region is the most important area of operation. As the voltage is increased, the current decreases. This feature makes tunneling diodes especially useful in oscillators and radio frequency (RF) applications.
Varactor Diodes
Varactor diodes are p-n junction diodes that are designed to act as a voltage controlled capacitance when operated under reverse bias.

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General Purpose Diodes - Infineon Technologies
> Diodes > General Purpose Diodes General Purpose Diodes General Purpose Diodes for rectifing, switching and clamping.
See Infineon Technologies Corporation Information
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See ON Semiconductor L.L.C. Profile & Catalog
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Part Numbers for General Purpose Diodes

Part # Distributor Manufacturer Product Category Description
DIODE, GENERAL PURPOSE, DUAL, Mectronic MMBD1205_NL Not Provided MMBD1205_NL
DIODE, GENERAL PURPOSE, 1A, 1K Mectronic MRA4007T3G Not Provided MRA4007T3G
BAY72 Amazon American Microsemiconductor Industrial & Scientific BAY72
SMS3923-005 Amazon American Microsemiconductor Industrial & Scientific SMS3923-005
UGF2.5 Amazon American Microsemiconductor Industrial & Scientific UGF2.5

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