Transient voltage suppressor (TVS) diodes are designed to limit over-voltages. They can dissipate high amounts of transient power in a short period of time. Transient voltage suppressor diodes are available in single-chip configurations or diode arrays. A single-chip TVS consists of one diode built into the chip. A TVS diode array is composed of multiple, discrete, usually unconnected diodes on a single silicon chip. Transient voltage suppressor diodes also differ in terms of direction. Unidirectional TVS diodes provide protection when current moves in only one direction. Bidirectional TVS diodes provide protection when current moves in both directions. Transient voltage suppressor diodes that are sold in Europe must comply with the Restriction of Hazardous Substances (RoHS) is a European Union (EU) directive from the European Union (EU). The pin count and the number of embedded TVS diodes are factors to consider when specifying an integrated circuit (IC) package. 

Performance specifications for transient voltage suppressor diodes include peak pulse power, maximum working voltage, maximum peak impulse current, clamping voltage, peak forward surge current, breakdown voltage, terminal capacitance, and operating temperature. Peak pulse power is the maximum power that transient voltage suppressor diodes can protect. The maximum working voltage is the continuous (DC) or peak voltage that can be applied to the device over the operating temperature range. When selecting a TVS, this voltage should be larger than the voltage of the device to be protected. Clamping voltage is the peak voltage across the suppressor, or the maximum voltage that the TVS will prevent. Peak forward surge current is the maximum allowable surge value of forward current without repetition. Breakdown voltage is the reverse voltage at which a small increase in voltage results in a sharp rise of reverse current. 

Transient voltage suppressor (TVS) diodes are designed to limit over-voltages. They can dissipate high amounts of transient power in a short period of time. Transient voltage suppressor diodes are available in single-chip configurations or diode arrays. A single-chip TVS consists of one diode built into the chip. A TVS diode array is composed of multiple, discrete, usually unconnected diodes on a single silicon chip. Transient voltage suppressor diodes also differ in terms of direction. Unidirectional TVS diodes provide protection when current moves in only one direction. Bidirectional TVS diodes provide protection when current moves in both directions. Transient voltage suppressor diodes that are sold in Europe must comply with the Restriction of Hazardous Substances (RoHS) is a European Union (EU) directive from the European Union (EU). The pin count and the number of embedded TVS diodes are factors to consider when specifying an integrated circuit (IC) package. 

Performance specifications for transient voltage suppressor diodes include peak pulse power, maximum working voltage, maximum peak impulse current, clamping voltage, peak forward surge current, breakdown voltage, terminal capacitance, and operating temperature. Peak pulse power is the maximum power that transient voltage suppressor diodes can protect. The maximum working voltage is the continuous (DC) or peak voltage that can be applied to the device over the operating temperature range. When selecting a TVS, this voltage should be larger than the voltage of the device to be protected. Clamping voltage is the peak voltage across the suppressor, or the maximum voltage that the TVS will prevent. Peak forward surge current is the maximum allowable surge value of forward current without repetition. Breakdown voltage is the reverse voltage at which a small increase in voltage results in a sharp rise of reverse current. 

Transient voltage suppressor diodes use many different IC package types. Examples include: diode outline (DO), small outline diode (SOD), transistor outline (TO), small outline transistor (SOT) discrete package (DPAK), and metal electrode leadless face (MELF). DO-4, DO-5, DO-8, DO-9, DO-15, DO-27, DO-34, DO-35, DO-41 and DO-201 are diode outline (DO) packages. SOD-80, SOD-106, SOD-123, SOD-323, and SOD-523 are small outline diode (SOD) packages. TO-3, TO-66, TO-92, TO-202, TO-220, TO-237 and TO-247 are transistor outline (TO) packages. SOT23, SOT26, SOT89, SOT143, SOT223, SOT323, SOT343, SOT346, SOT353, SOT363, SOT416, SOT457, and SOT523 are small outline transistor (SOT) packages. MELF packages for transient voltage suppressor diodes include QuadroMELF, MicroMELF, and MiniMELF. D2PAK is a large surface-mounted package that includes a heat sink. SC-59, SC-74, and SC-76 are plastic, surface-mounted packages with three leads.