|
|
|
 |
Product Alerts
Keep current on the latest products, new suppliers, and technical articles of interest to you. (See Topics) |
- Find Products/Services
- Find Product News
- Find Parts by Number
- Conduct Research
- Engineering Web Search
Products/Services for transistor rf
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors
RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about Bipolar RF Transistors
Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important. Search by Specification | Learn More about Power MOSFET
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Search by Specification | Learn More about Metal-oxide Semiconductor FET (MOSFET)
RF diodes are designed to handle high-power radio frequency (RF) signals in stereo amplifiers, radio transmitters, television monitors, and other RF or microwave devices. Search by Specification | Learn More about RF Diodes
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals. Search by Specification | Learn More about Power Bipolar Transistors
RF switches route radio frequency signals to particular waveguides. Search by Specification | Learn More about RF Switches
RF waveguide amplifiers accept a varying input signal and produce an output signal that varies in the same way, but with a larger amplitude. Learn More about RF Waveguide Amplifiers
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching). Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)
...to output, and are characterized by a specific logic family. Common logic families include transistor-transistor logic (TTL), complementary metal-oxide semiconductor (CMOS), and emitter-coupled logic (ECL). Specifications for delay lines include delay... Search by Specification | Learn More about Delay Lines
Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More about Small-signal Bipolar Transistors (BJT)
Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More about Junction Field-Effect Transistors (JFET)
|
||||||||
Power RF Transistors - NPN or PNP Bipolar from AMS American Microsemiconductor, Inc.
Discontinued & Obsolete Electronic Parts by AMS American Microsemiconductor, Inc.
Discretes from Smith & Associates Smith & Associates
Transistor Kendu International Inc.
Bipolar Junction Transistor (BJT) American Microsemiconductor, Inc.
New Split Tab DPAK for Dual MOSFETs Advanced Power Electronics Corp. USA
|
Product News for transistor rf
Power RF Transistors - NPN or PNP Bipolar from AMS
NPN or PNP Bipolar RF Transistors.
If you have need of VHF Amplifiers (136-210 Mhz), American Microsemiconductor will support MHW607-1, -2, -3, and -4 types used primarily in portable hand held radios. (read more)
TGF2021-04-SG & TGF2021-08-SG, 4GHz RF Transistors
TriQuint's newest GaAs pHEMT discrete transistors, TGF2021-04-SG (4W) & TGF2021-08-SG (7W), are ideal for a variety of applications due to their versatility, offering either narrowband or wideband performance: 20 MHz to 4 GHz. (read more)
Bipolar Junction Transistor (BJT)
Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN transistor or PNP transistor. (read more)
NPN and PNP Monolithic Dual Transistors
LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Ideal for amplifier input applications seeking Low Offset(0.5 to 3mV), Low Drift, High Gain(400 beta), High Breakdown (25 to 60 Volts)and Low Capacitance(3pf). Replacement for Analog Device MAT01, MAT02 series and Intersil IT120, IT130 series. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)
Unijunction Transistors (UJT's) from AMS
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
AMS: Unijunction Transistor (UJT)
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
Programmable Unijunction Transistor known as PUT
(PUT) Programmable Unijunction Transistor from American Microsemiconductor, Inc.
Programmable Unijunction Transistor - The PUT is similar to standard Unijunction Transistor except that the breakdown or trigger voltage can be adjusted with external resistors. (read more)
Junction Field Effect Transistor J-FET from AMS
The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is a small change in input voltage causes a large change in output current. (read more)
Transistor
Bipolar Transistor:
SOT-523, SOT-323, SOT-363, SOT-23, SOT-89, SOT-223, SOT-252, SOT-263, SOT-92, SOT-92SP, SOT-251, SOT-126, SOT-126ML, SOT-220AB, SOT-230FP
Digital Transistor:
SOT-323, SOT-363, SOT-23, SOT-92, SOT-92SP (read more)
AP30G120W-3 Insulated Gate Bipolar Transistor
The APEC series of fast Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses. The AP30G120W-3 is designed for applications such as Induction Heaters and Micro Ovens where high speed switching is a required feature. (read more)
Parts by Number for transistor rf
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| RF TRANSISTOR | netCOMPONENTS | Not Provided | Not Provided | Not Provided |
| RF TRANSISTOR | netCOMPONENTS | Not Provided | Not Provided | Not Provided |
| RF TRANSISTOR | netCOMPONENTS | Not Provided | Not Provided | Not Provided |
| RF50042 | AmericanMicroSemi | AMS | Transistors:Transistors:Bipolar:Si NPN Low-Power:Bipolar:Si NPN Low-Power | RF50042 Transistors Transistors Bipolar Si NPN Low-Power Bipolar Si NPN Low-Power RF50042 is on sale at our online store. Buy it for 3.00 or less. Call 973-377-9566 100% Satisfaction Gauranteed. FREE UPS ground shipping or more. Also get special dis |
| RF1029 | AmericanMicroSemi | AMS | Transistors:UHF/Microwave Transistors:Bipolar NPN | Transistors:UHF/Microwave Transistors:Bipolar NPN |
Conduct Research
-
AN721: Impedance Matching Networks Applied to RF Power Transistors, Courtesy of Motorola
Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer to high frequency power amplifiers. Although matching networks normally take the form of...(read more)
-
AN215A: RF Small Signal Design Using Two Port Controllers, Courtesy of Motorla
Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution (free from approximation) available for the complete...(read more)
-
Silicon RF Power MOSFETS
Silicon RF Power MOSFETS Providing general guidelines for understanding the design and operation of the transistors, this book describes the physics, design considerations and RF performance of...(read more)
-
Non-RF Applications for the Surface Mount Schottky Diode Pairs -App Note
Schottky diodes, based on silicon or gallium arsenide substrates, are used in many receiver and transmitter circuits for mixing and detecting at frequencies up to 100 GHz. Today, advanced wafer and...(read more)
-
Biasing MSA Series RF Integrated Circuits - App Note
Like discrete transistors, the MSA Series of RF Integrated Circuits can be operated at different bias points to achieve different performance results. These Monolithic Silicon Amplifiers have an...(read more)
-
Comparison of Bulk and Epitaxial PIN Diodes in Low-Cost Wideband RF Switching - White Paper
Both electromechanical and semiconductor switches are proven technologies used in the control and routing of RF signals. While the use of mechanical switches can be justified in precision test...(read more)
-
Microwave Transistor Bias Considerations - App Note
Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent in measuring s-parameters, calculating gain, and optimizing bandwidth and...(read more)
-
Low Distortion PIN Diode Switch Using Surface Mount Devices - App Note
One of the practical applications of the surface mounted PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is generally treated as a current...(read more)
-
Trends in Microwave/Millimeter-Wave Front-End Technology
Unique, high-performance components are utilized between the air or fiber-optic media interface and baseband/digital signal processing functions. TriQuint and other suppliers have developed power...(read more)
-
High Linearity and Medium Power Applications Using the Avago's ATF-511P8 PHEMT-App Note
Avago Technologies ATF-511P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 41.3 dBm and a 1 dB compression point of 26 dBm, the ATF-511P8 is...(read more)
|
RF Amplifier Design Using HFA3046, HFA3096, TM HFA3127,... RF Amplifier Design Using HFA3046, HFA3096, TM HFA3127, HFA3128 Transistor Arrays Application Note November 1996 AN9315.1 Introduction HFA3046 See Intersil Corporation Information |
|
|
RF RF RF Power RF Industrial, Scientific and Medical Power Transistors RF Sensors CodeWarrior® Development Tools See Freescale Semiconductor, Inc. Information |
|
|
RF Power Press Releases RF Sensors CodeWarrior® Development Tools RF Power RF Industrial, Scientific and Medical Power Transistors See Freescale Semiconductor, Inc. Information |
|
|
RF Transistors Manufacturers, Suppliers from China & Taiwan... Home > Products> Electronic Components & Production Equipment> Capacitors, Resistors & Transistors > RF Transistor |
|
|
Richardson Electronics Ltd - HOME RF Transistors RF Power RF Power Transistor Bipolar/HBT RF Power Transistor GaAs RF Power Transistor GaN See Richardson Electronics, Ltd. Information |
|
|
Fujitsu Providing 65nm RF CMOS Manufacturing Services with... Fujitsu Providing 65nm RF CMOS Manufacturing Services with Advanced RF CMOS Process Design Kit See Fujitsu Limited Information |
|
|
The PSP Model in the RF CMOS Design Kit White Paper : FUJITSU... The PSP Model in the RF CMOS Design Kit White Paper |
|
|
RF Transmitter Electronic Circuits 4 Transistor Transmitter: (added 8/03) 49MHz Walkie Talkie: Lots of people are |
|
|
RF Transistors Information | Business.com Rf Transistor Guide Looking for Rf? See our Rf Transistor Directory. See Business.com, Inc. Information |
|
|
dBm Engineering, RF Power Engineering Design Services dBm Engineering provides RF power amplifier, RF circuit, and RF transistor design services for diverse companies delivering wireless applications, See dBm Engineering Information |
More >>
