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Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals. Search by Specification | Learn More about Power Bipolar Transistors
RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about Bipolar RF Transistors
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important. Search by Specification | Learn More about Power MOSFET
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Search by Specification | Learn More about Metal-oxide Semiconductor FET (MOSFET)
Phototransistors are solid-state light detectors with internal gain that are used to provide analog or digital signals. They detect visible, ultraviolet and near-infrared light from a variety of sources and are more sensitive than photodiodes. This category includes photodarlingtons. Search by Specification | Learn More about Phototransistors
Unijunction transistors (UJT) are three-terminal devices that exhibit a negative resistance characteristic. Search by Specification | Learn More about Unijunction Transistors (UJT)
Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More about Junction Field-Effect Transistors (JFET)
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching). Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)
Programmable uni-junction transistors (PUT) are three-terminal thyristors that are triggered into conduction when the voltage at the anode exceeds the voltage at the gate. The PUT is similar to the UJT, but its intrinsic standoff ratio can be set by two external resistors. Hence, the term "programmable" is used. Search by Specification | Learn More about Programmable Unijunction Transistors (PUT)
Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More about Small-signal Bipolar Transistors (BJT)
Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors
Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two discrete transistors. Search by Specification | Learn More about Darlington Transistors
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Discretes from Smith & Associates Smith & Associates
Transistor Kendu International Inc.
Transient Voltage Suppressor (TVS) American Microsemiconductor, Inc.
Parameter Searching American Microsemiconductor, Inc.
TGF2021-04-SG & TGF2021-08-SG, 4GHz RF Transistors TriQuint Semiconductor, Inc.
IRFB4127PbF with TrenchFET Gen 6 Technology Future Electronics
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NPN or PNP Bipolar RF Transistors.
If you have need of VHF Amplifiers (136-210 Mhz), American Microsemiconductor will support MHW607-1, -2, -3, and -4 types used primarily in portable hand held radios. (read more)
Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN transistor or PNP transistor. (read more)
LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Ideal for amplifier input applications seeking Low Offset(0.5 to 3mV), Low Drift, High Gain(400 beta), High Breakdown (25 to 60 Volts)and Low Capacitance(3pf). Replacement for Analog Device MAT01, MAT02 series and Intersil IT120, IT130 series. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
(PUT) Programmable Unijunction Transistor from American Microsemiconductor, Inc.
Programmable Unijunction Transistor - The PUT is similar to standard Unijunction Transistor except that the breakdown or trigger voltage can be adjusted with external resistors. (read more)
The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is a small change in input voltage causes a large change in output current. (read more)
TriQuint's newest GaAs pHEMT discrete transistors, TGF2021-04-SG (4W) & TGF2021-08-SG (7W), are ideal for a variety of applications due to their versatility, offering either narrowband or wideband performance: 20 MHz to 4 GHz. (read more)
Bipolar Transistor:
SOT-523, SOT-323, SOT-363, SOT-23, SOT-89, SOT-223, SOT-252, SOT-263, SOT-92, SOT-92SP, SOT-251, SOT-126, SOT-126ML, SOT-220AB, SOT-230FP
Digital Transistor:
SOT-323, SOT-363, SOT-23, SOT-92, SOT-92SP (read more)
The APEC series of fast Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses. The AP30G120W-3 is designed for applications such as Induction Heaters and Micro Ovens where high speed switching is a required feature. (read more)
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Datasheet Archive - Free Datasheet Search Engine - PDF... Transistor datasheet Transistor cross reference |
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Datasheet Archive - BUV26 datasheet - BUV26 application note -... SILICON NPN SWITCHING TRANSISTOR Datasheet 38.23 Kb, 4 Pg. The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers. |
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Global Electronic Components Datasheet Locator datasheet locator , electronic component datasheets , datasheets , data sheets , semiconductor datasheets , datasheet search engine , component |
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LM317 20090706.fm See Fairchild Semiconductor Corporation Information |
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KSP44/45 NPN Epitaxial Silicon Transistor KSP 44/4 5 KSP44/45 High Voltage Transistor ? Collector-Emitter Voltage: VCEO=KSP44: 400V KSP45: 350V ? Collector Power Dissipation: PC (max)=625mW See Fairchild Semiconductor Corporation Information |
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to Identify terminals of the transistor without a datasheet to Identify terminals of the transistor without a datasheet |
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bulgarian transistor datasheet bulgarian transistor datasheet EDAboard.com Forum Index -> Electronic Elementary Questions -> bulgarian transistor datasheet |
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Re: Transistor datasheet Re: Transistor datasheet [ Follow Ups [ Post Followup [ www.epanorama.net discussion index [ FAQ |
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datasheet Re: transistor (A928) datasheet godwin inimfon 23:31:01 11/07/03 (0) Re: transistor (A928) datasheet godwin inimfon 23:27:36 11/07/03 (0) |
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ME 2N2711 Series Datasheets. MPS3391, 2N2716, MPS6573, 2N3397,... Datasheet*) 2N2712 NPN silicon planar epitaxial transistor in 3-pin TO-92B package. |