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Products/Services for transistor data sheet
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals. Search by Specification | Learn More about Power Bipolar Transistors
Sheet metal fabrication services manufacture components by cutting, bending, rolling, forming, stamping, and welding sheet metal. Search by Specification | Learn More about Sheet Metal Fabrication Services
Metal sheet is metal or alloy stock supplied or available in the form of sheet or foil. Metal sheet has a thickness between 0.006" and 0.250", and is 24" (609.6 mm) or more in width. Search by Specification | Learn More about Metal Sheet
Plastic sheet and plastic film is formed to a precise thickness and used in many different applications. Search by Specification | Learn More about Plastic Sheet and Plastic Film
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching). Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors
Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More about Small-signal Bipolar Transistors (BJT)
Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More about Junction Field-Effect Transistors (JFET)
RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about Bipolar RF Transistors
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors
Perforated sheet materials and expanded sheet materials are designed with hole patterns and/or stretched (expanded). They are used as screens in separators, walkways, sunscreens, decorative coverings, etc. Learn More about Perforated and Expanded Sheet Materials
Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two discrete transistors. Search by Specification | Learn More about Darlington Transistors
Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors
Unijunction transistors (UJT) are three-terminal devices that exhibit a negative resistance characteristic. Search by Specification | Learn More about Unijunction Transistors (UJT)
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Transistor Kendu International Inc.
Discretes from Smith & Associates Smith & Associates
TGF2021-04-SG & TGF2021-08-SG, 4GHz RF Transistors TriQuint Semiconductor, Inc.
Transient Voltage Suppressor (TVS) American Microsemiconductor, Inc.
IRFB4127PbF with TrenchFET Gen 6 Technology Future Electronics
Parameter Searching American Microsemiconductor, Inc.
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Product News for transistor data sheet
Polyurethane & Adhesive Data Sheet
Technical data is available which includes adhesive information and Polyurethane testing. These items will assist you in figuring out which parts are the right ones for your project. (read more)
Power RF Transistors - NPN or PNP Bipolar from AMS
NPN or PNP Bipolar RF Transistors.
If you have need of VHF Amplifiers (136-210 Mhz), American Microsemiconductor will support MHW607-1, -2, -3, and -4 types used primarily in portable hand held radios. (read more)
Bipolar Junction Transistor (BJT)
Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN transistor or PNP transistor. (read more)
Unijunction Transistors (UJT's) from AMS
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
AMS: Unijunction Transistor (UJT)
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
Programmable Unijunction Transistor known as PUT
(PUT) Programmable Unijunction Transistor from American Microsemiconductor, Inc.
Programmable Unijunction Transistor - The PUT is similar to standard Unijunction Transistor except that the breakdown or trigger voltage can be adjusted with external resistors. (read more)
Junction Field Effect Transistor J-FET from AMS
The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is a small change in input voltage causes a large change in output current. (read more)
Data Sheets for Aerospace Pressure Sensors
Kavlico has just published four NEW Data Sheets for their recently designed line of aerospace grade pressure sensor products. (read more)
NPN and PNP Monolithic Dual Transistors
LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Ideal for amplifier input applications seeking Low Offset(0.5 to 3mV), Low Drift, High Gain(400 beta), High Breakdown (25 to 60 Volts)and Low Capacitance(3pf). Replacement for Analog Device MAT01, MAT02 series and Intersil IT120, IT130 series. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)
TGF2021-04-SG & TGF2021-08-SG, 4GHz RF Transistors
TriQuint's newest GaAs pHEMT discrete transistors, TGF2021-04-SG (4W) & TGF2021-08-SG (7W), are ideal for a variety of applications due to their versatility, offering either narrowband or wideband performance: 20 MHz to 4 GHz. (read more)
Conduct Research
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System Supervisors in ICSP™ Architectures
AN820 M TM System Supervisors in ICSP Architectures CIRCUITRY BACKGROUND Author: Ken Dietz Microchip Technology Inc. MCP120 Output Stage A simplified schematic for the MCP120 output stage is shown in...(read more)
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Biasing MSA Series RF Integrated Circuits - App Note
Like discrete transistors, the MSA Series of RF Integrated Circuits can be operated at different bias points to achieve different performance results. These Monolithic Silicon Amplifiers have an...(read more)
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Xilinx DS302 Virtex-4 FPGA Data Sheet: DC and Switching... 0 Virtex-4 FPGA Data Sheet: DC and Switching Characteristics DS302 (v3.7) September 9, 2009 0 0 Product Specification Virtex-4 FPGA Electrical See Xilinx, Inc. Information |
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Xilinx DS695 XPS Thin Film Transistor (TFT) Controller... This 24-bit pixel data is transmitted to the 12-bit DVI data port by clocking the data on both edges using 4 www.xilinx.com DS695 April 24, 2009 See Xilinx, Inc. Information |
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Datasheet Archive - Free Datasheet Search Engine - PDF... Electronic Component Data Sheet and Photo Index |
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BLF574 - HF / VHF power LDMOS transistor from NXP... of the product(s) described in the product data sheet may have changed since publication of the data sheet and therefore information in datasheets on See NXP Information |
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LM555 Timer Level of Trigger Pulse 00785124 00785125 Discharge Transistor (Pin 7) Discharge Transistor (Pin 7) Voltage vs. Sink Current Voltage vs. Sink Current See National Semiconductor Information |
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2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field... Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. See Digi-Key Corporation Profile & Catalog |
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DS18S20 High-Precision 1-Wire Digital Thermometer... Capability Simplifies Distributed 1 2 3 Temperature Sensing Applications Requires No External Components N.C. 1 8 N.C. Can Be Powered From Data Line. |
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Simplify Isolated Temperature Sensing With Single Wire Sensors... line selections (as well as exact model number, refer to the MAX6575 data sheet for details) is: IC3, tD1: 5 ?s/?K IC4, tD2: 20 ?s/?K IC5, tD3: 80 |
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Global Electronic Components Datasheet Locator datasheet locator , electronic component datasheets , datasheets , data sheets , semiconductor datasheets , datasheet search engine , component |
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MR2A16A MRAM Data Sheet MR2A16A Data Sheet, Rev. 6 8 Freescale Semiconductor Timing Specifications tAVAV A (ADDRESS) tAXQX Q (DATA OUT) PREVIOUS DATA VALID DATA VALID tAVQV See Freescale Semiconductor, Inc. Information |
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