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Products/Services for transistor bipolar function
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals. Search by Specification | Learn More about Power Bipolar Transistors
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching). Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)
RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about Bipolar RF Transistors
Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More about Small-signal Bipolar Transistors (BJT)
Power electronics devices are solid state devices or transistors capable of modulating or converting electrical power. Learn More about Power Electronics Devices
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors
Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two discrete transistors. Search by Specification | Learn More about Darlington Transistors
Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More about Junction Field-Effect Transistors (JFET)
Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors
Signal generators and waveform generators are used to test and align all types of transmitters and receivers, to measure frequency and to generate a signal, waveform or noise source. Signal generators can use AC energy, audio frequency (AF) and radio frequency (RF) to function. Search by Specification | Learn More about Signal Generators and Waveform Generators
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Search by Specification | Learn More about Metal-oxide Semiconductor FET (MOSFET)
Gate drive transformers are used to drive high-speed switching devices such as field effect transistors (FET) and insulated gate bipolar transistors (IGBT). They are used in applications such as switching power supplies. Search by Specification | Learn More about Gate Drive Transformers
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important. Search by Specification | Learn More about Power MOSFET
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Bipolar Junction Transistor (BJT) American Microsemiconductor, Inc.
Transistor Kendu International Inc.
Discretes from Smith & Associates Smith & Associates
Power RF Transistors - NPN or PNP Bipolar from AMS American Microsemiconductor, Inc.
NPN and PNP Monolithic Dual Transistors Linear Integrated Systems, Inc.
Parameter Searching American Microsemiconductor, Inc.
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Product News for transistor bipolar function
Bipolar Junction Transistor (BJT)
Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN transistor or PNP transistor. (read more)
Power RF Transistors - NPN or PNP Bipolar from AMS
NPN or PNP Bipolar RF Transistors.
If you have need of VHF Amplifiers (136-210 Mhz), American Microsemiconductor will support MHW607-1, -2, -3, and -4 types used primarily in portable hand held radios. (read more)
AP30G120W-3 Insulated Gate Bipolar Transistor
The APEC series of fast Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses. The AP30G120W-3 is designed for applications such as Induction Heaters and Micro Ovens where high speed switching is a required feature. (read more)
NPN and PNP Monolithic Dual Transistors
LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Ideal for amplifier input applications seeking Low Offset(0.5 to 3mV), Low Drift, High Gain(400 beta), High Breakdown (25 to 60 Volts)and Low Capacitance(3pf). Replacement for Analog Device MAT01, MAT02 series and Intersil IT120, IT130 series. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)
Unijunction Transistors (UJT's) from AMS
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
AMS: Unijunction Transistor (UJT)
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
Junction Field Effect Transistor J-FET from AMS
The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is a small change in input voltage causes a large change in output current. (read more)
Transistor
Bipolar Transistor:
SOT-523, SOT-323, SOT-363, SOT-23, SOT-89, SOT-223, SOT-252, SOT-263, SOT-92, SOT-92SP, SOT-251, SOT-126, SOT-126ML, SOT-220AB, SOT-230FP
Digital Transistor:
SOT-323, SOT-363, SOT-23, SOT-92, SOT-92SP (read more)
New Ethernet I/O Module combines three functions
in one model with a mix of analog inputs, analog outputs and discrete I/O channels
Acromag's new remote I/O modules feature analog inputs, analog outputs, and bi-directional discrete I/O channels on a compact, low-cost unit with a choice of three Ethernet protocols. (read more)
Programmable Unijunction Transistor known as PUT
(PUT) Programmable Unijunction Transistor from American Microsemiconductor, Inc.
Programmable Unijunction Transistor - The PUT is similar to standard Unijunction Transistor except that the breakdown or trigger voltage can be adjusted with external resistors. (read more)
Conduct Research
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Biasing MSA Series RF Integrated Circuits - App Note
Like discrete transistors, the MSA Series of RF Integrated Circuits can be operated at different bias points to achieve different performance results. These Monolithic Silicon Amplifiers have an...(read more)
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MOSFET - Wikipedia, the free encyclopedia It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. |
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Logic gate - Wikipedia, the free encyclopedia The simplest family of logic gates using bipolar transistors is called resistor-transistor logic, or RTL. Unlike diode logic gates, RTL gates can be |
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Discrete Product Listing - by function, Fairchild... Home > Analog Products > Discrete > Discrete Product Listing - by function Discrete Product Listing - by function Parametric search See Fairchild Semiconductor Corporation Information |
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NXP Semiconductors See NXP Information |
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Richardson Electronics Ltd - HOME RF Power Transistor Bipolar/HBT RF Power Transistor GaAs RF Small Signal Transistor Bipolar/HBT RF Small Signal Transistor E-pHEMT See Richardson Electronics, Ltd. Information |
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Class 326: ELECTRONIC DIGITAL LOGIC CIRCUITRY ( Manual of U.S.... . Bipolar transistor 19 . . With Schottky device . Bipolar transistor 49 . Field-effect transistor |
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DC parameterized piecewise-function transistor models for... DC parameterized piecewise-function transistor models for bipolar and MOS logic stage delay evaluation |
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Mathematical approximation of the hyperbolic tangent an assimilation of the transfer function of a differential pair of MOS transistors to a hyperbolic tangent function. |
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FET Circuit Applications See National Semiconductor Information |
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[No Title] the first band-gap reference.1 It used conventional junction-isolated bipolar-IC technology to make a stable low-voltage (1.220 V) reference. See National Semiconductor Information |
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