Silicon controlled rectifiers (SCR) are four-layer (PNPN) thyristors with three terminals: an input control terminal (gate), an output terminal (anode), and a terminal common to both the input and output (cathode). SCRs are used mainly with high voltages and currents, often to control alternating current (AC) where the change of sign causes the device to switch off automatically. Search by Specification | Learn More about Silicon Controlled Rectifiers (SCR)

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors

RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about Bipolar RF Transistors

RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors

...and a transistor’s ability to turn off a current using an electrode. Specialty thyristors are often used in conjunction with other types of transistors. Unijunction transistors (UJT) and programmable unijunction transistors (PUT) are semiconductor... Learn More about Specialty Thyristors

Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts Search by Specification | Learn More about Metal-oxide Semiconductor FET (MOSFET)

Unijunction transistors (UJT) are three-terminal devices that exhibit a negative resistance characteristic. Search by Specification | Learn More about Unijunction Transistors (UJT)

transistors (BJTs) and can be used in higher frequency applications where switching power losses are important. Search by Specification | Learn More about Power MOSFET

Semiconductors (metalloids) or semiconductor materials are used to fabricate microelectronic and optoelectronic devices such as transistors, photodetectors or solar cells. Learn More about Semiconductors and Semiconductor Materials

Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)

Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More about Small-signal Bipolar Transistors (BJT)

Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More about Junction Field-Effect Transistors (JFET)