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Products/Services for rf npn transistor
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors
RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about Bipolar RF Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors
Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors
...package types for general purpose diodes include transistor outline (TO), diode outline (DO), small outline transistor (SOT), and small outline diode (SOD). Other general purpose diodes are available in a discrete package (DPAK) or in D2PAK, a large... Search by Specification | Learn More about General Purpose Diodes
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical Search by Specification | Learn More about Power Bipolar Transistors
Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More about Small-signal Bipolar Transistors (BJT)
Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two Search by Specification | Learn More about Darlington Transistors
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)
RF diodes are designed to handle high-power radio frequency (RF) signals in stereo amplifiers, radio transmitters, television monitors, and other RF or microwave devices. Search by Specification | Learn More about RF Diodes
Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More about Junction Field-Effect Transistors (JFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts Search by Specification | Learn More about Metal-oxide Semiconductor FET (MOSFET)
RF transmitters are electronic devices consisting of an oscillator, modulator, and other circuits that produce an RF signal. Search by Specification | Learn More about RF Transmitters
RF switches route radio frequency signals to particular waveguides. Search by Specification | Learn More about RF Switches
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Power RF Transistors - NPN or PNP Bipolar from AMS American Microsemiconductor, Inc.
Discontinued & Obsolete Electronic Parts by AMS American Microsemiconductor, Inc.
Transistor Kendu International Inc.
Discretes from Smith & Associates Smith & Associates
BiFET Amplifier (P Ch MOSFET Input & NPN Driver) Linear Integrated Systems, Inc.
IRFS4620PBF HEXFET® power MOSFETs Future Electronics
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Product News for rf npn transistor
Power RF Transistors - NPN or PNP Bipolar from AMS
NPN or PNP Bipolar RF Transistors.
If you have need of VHF Amplifiers (136-210 Mhz), American Microsemiconductor will support MHW607-1, -2, -3, and -4 types used primarily in portable hand held radios. (read more)
NPN and PNP Monolithic Dual Transistors
LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Ideal for amplifier input applications seeking Low Offset(0.5 to 3mV), Low Drift, High Gain(400 beta), High Breakdown (25 to 60 Volts)and Low Capacitance(3pf). Replacement for Analog Device MAT01, MAT02 series and Intersil IT120, IT130 series. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)
Bipolar Junction Transistor (BJT)
Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN transistor or PNP transistor. (read more)
TGF2021-04-SG & TGF2021-08-SG, 4GHz RF Transistors
TriQuint's newest GaAs pHEMT discrete transistors, TGF2021-04-SG (4W) & TGF2021-08-SG (7W), are ideal for a variety of applications due to their versatility, offering either narrowband or wideband performance: 20 MHz to 4 GHz. (read more)
Unijunction Transistors (UJT's) from AMS
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
AMS: Unijunction Transistor (UJT)
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
BiFET Amplifier (P Ch MOSFET Input & NPN Driver)
LS320 High Input Impedance, High Gain, Low Noise, BiFET Amplifier. Designed for High Impedance, Low Power applications in need of High Gain (30mS), and Femto Amp Leakage over a broad temperature range. It also provides Low Capacitance (1.5pf) and Low Noise (25uV). Direct Replacement for Amperex LTA-320. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)
Programmable Unijunction Transistor known as PUT
(PUT) Programmable Unijunction Transistor from American Microsemiconductor, Inc.
Programmable Unijunction Transistor - The PUT is similar to standard Unijunction Transistor except that the breakdown or trigger voltage can be adjusted with external resistors. (read more)
Junction Field Effect Transistor J-FET from AMS
The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is a small change in input voltage causes a large change in output current. (read more)
Transistor
Bipolar Transistor:
SOT-523, SOT-323, SOT-363, SOT-23, SOT-89, SOT-223, SOT-252, SOT-263, SOT-92, SOT-92SP, SOT-251, SOT-126, SOT-126ML, SOT-220AB, SOT-230FP
Digital Transistor:
SOT-323, SOT-363, SOT-23, SOT-92, SOT-92SP (read more)
Parts by Number for rf npn transistor
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| RF1029 | AmericanMicroSemi | AMS | Transistors:UHF/Microwave Transistors:Bipolar NPN | Transistors:UHF/Microwave Transistors:Bipolar NPN |
| RF3096 | AmericanMicroSemi | AMS | Transistors:UHF/Microwave Transistors:Bipolar NPN | Transistors:UHF/Microwave Transistors:Bipolar NPN |
| RF3094 | AmericanMicroSemi | AMS | Transistors:UHF/Microwave Transistors:Bipolar NPN | Transistors:UHF/Microwave Transistors:Bipolar NPN |
| RF1032 | AmericanMicroSemi | AMS | Transistors:UHF/Microwave Transistors:Bipolar NPN | Transistors:UHF/Microwave Transistors:Bipolar NPN |
| RF1030 | AmericanMicroSemi | AMS | Transistors:UHF/Microwave Transistors:Bipolar NPN | RF1030 Transistors UHF/Microwave Transistors Bipolar NPN RF1030 is on sale at our online store. Buy it for 29.00 or less. Call 973-377-9566 100% Satisfaction Gauranteed. FREE UPS ground shipping or more. Also get special discount on International or |
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BFT25 - NPN 2 GHz wideband transistor from NXP Semiconductors NPN transistor in a plastic SOT23 envelope. See NXP Information |
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Transistor wideband NPN up to 3.5 GHz from NXP Semiconductors Transistor wideband NPN up to 3.5 GHz BFG10 - NPN 2 GHz RF power transistor BFG10W - UHF power transistor BFS17 - NPN 1 GHz wideband transistor See NXP Information |
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RF Amplifier Design Using HFA3046, HFA3096, TM HFA3127,... RF Amplifier Design Using HFA3046, HFA3096, TM HFA3127, HFA3128 Transistor Arrays Application Note November 1996 AN9315.1 Introduction HFA3046 See Intersil Corporation Information |
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RF Up/Down Conversion Is Simplified By Linear Arrays... FIGURE 1. DISCRETE TRANSISTOR AMPLIFIER purpose it will contain a block of NPN bipolar transistors, a The multistage transistor amplifier design See Intersil Corporation Information |
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Semiconductor: MRF238 (MRF 238) - NPN SILICON RF POWER... English in ?: Semiconductor: MRF238 (MRF 238) - NPN SILICON RF POWER TRANSISTOR... |
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PA Control Silicon NPN Planar RF Transistor; Low Noise; Low Power; up to 7.5 GHz; Silicon NPN Planar RF Transistor; Low Noise; up to 8.0 GHz; See Vishay Intertechnology, Inc. Information |
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RF Modulator Silicon NPN Planar RF Transistor; Low Noise; Low Power; up to 7.5 GHz; Silicon NPN Planar RF Transistor; Low Noise; up to 8.0 GHz; See Vishay Intertechnology, Inc. Information |
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Product Folder - 2N3663 - NPN RF Transistor 2N3663 NPN RF Transistor Related Links Request samples How to order See Fairchild Semiconductor Corporation Information |
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Planeta Semiconductor JSC - View list - Wideband RF... NPN bipolar silicon RF Transistor in package TO-92 fT min = 5.0GHz, GP typ = 11.5dB, Fmax = 3dB |
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??(??)??????---??????? NPN Silicon RF Power Transistor Motorola MRF455 RF power transistor - MRF464 NPN Silicon RF Power Transistor |
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