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Products/Services for rf fet transistor
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors
Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Search by Specification | Learn More about Metal-oxide Semiconductor FET (MOSFET)
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important. Search by Specification | Learn More about Power MOSFET
Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More about Junction Field-Effect Transistors (JFET)
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors
RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude. Search by Specification | Learn More about RF Amplifiers
RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about Bipolar RF Transistors
RF waveguide amplifiers accept a varying input signal and produce an output signal that varies in the same way, but with a larger amplitude. Learn More about RF Waveguide Amplifiers
RF switches route radio frequency signals to particular waveguides. Search by Specification | Learn More about RF Switches
...that consist of independent, isolated relays or field-effect transistor (FET) switches. They are designed to connect one input to one output. By contrast, multiplexers can connect one input to several outputs, or several inputs to one output. Matrix switches... Search by Specification | Learn More about VME, VPX and VXI Switches
Amplifier and comparator chips are board-level components for amplifying voltage, current, or power. Search by Specification | Learn More about Amplifier and Comparator Chips
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical Search by Specification | Learn More about Power Bipolar Transistors
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)
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Discretes from Smith & Associates Smith & Associates
Transistor Kendu International Inc.
Transient Voltage Suppressor (TVS) American Microsemiconductor, Inc.
IRFB4127PbF with TrenchFET Gen 6 Technology Future Electronics
Parameter Searching American Microsemiconductor, Inc.
TGF2021-04-SG & TGF2021-08-SG, 4GHz RF Transistors TriQuint Semiconductor, Inc.
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Product News for rf fet transistor
Junction Field Effect Transistor J-FET from AMS
The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is a small change in input voltage causes a large change in output current. (read more)
Power RF Transistors - NPN or PNP Bipolar from AMS
NPN or PNP Bipolar RF Transistors.
If you have need of VHF Amplifiers (136-210 Mhz), American Microsemiconductor will support MHW607-1, -2, -3, and -4 types used primarily in portable hand held radios. (read more)
TGF2021-04-SG & TGF2021-08-SG, 4GHz RF Transistors
TriQuint's newest GaAs pHEMT discrete transistors, TGF2021-04-SG (4W) & TGF2021-08-SG (7W), are ideal for a variety of applications due to their versatility, offering either narrowband or wideband performance: 20 MHz to 4 GHz. (read more)
High Speed (2ns), SMT, Quad, DMOS FET Switch
SD5400CY & SD5401CY : N-channel Enhancement Mode, Monolithic Quad, Surface Mount, Lateral DMOS Switch. Ideal for High Speed (2nS), Low Capacitance (0.5pf) Analog Switching Applications seeking improved accuracy, and throughput with less gliching or distortion. Direct Replacement for Siliconix and Calogic SD5400CY, SD5401CY, SD5000N, SD5001N, SD5000I Series. Instant Availability (read more)
High Speed (2ns), Single, DMOS FET Switch
SST210/SD210DE, SST211/SD211DE, SST213/SD213/DE, SST214/SD214DE, SST215/SD215DE : N-channel Enhancement Mode, Single, Lateral DMOS Switch. Ideal for High Speed (2nS), Low Capacitance (0.5pf) Analog Switching Applications seeking improved accuracy, and throughput with less gliching or distortion. Direct Replacements for Siliconix and Calogic. Instant Availability (read more)
A Flexible Dual-band WiMAX RF Front End Solution
Designers of mobile WiMAX/WiBRO systems face many challenges when designing and specifying the RF front end. There are issues with system power output, FCC regulations, power consumption, and interference with local cellular radios. Other issues are layout and design flexibility, and the potential need for custom modules. (read more)
Bipolar Junction Transistor (BJT)
Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN transistor or PNP transistor. (read more)
NPN and PNP Monolithic Dual Transistors
LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Ideal for amplifier input applications seeking Low Offset(0.5 to 3mV), Low Drift, High Gain(400 beta), High Breakdown (25 to 60 Volts)and Low Capacitance(3pf). Replacement for Analog Device MAT01, MAT02 series and Intersil IT120, IT130 series. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)
Unijunction Transistors (UJT's) from AMS
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
AMS: Unijunction Transistor (UJT)
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
Parts by Number for rf fet transistor
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| MRFG35010 | Digi-Key | Freescale Semiconductor | Discrete Semiconductor Products | TRANSISTOR RF FET 3.5GHZ NI360HF |
| MRFG35010AR5 | Digi-Key | Freescale Semiconductor | Discrete Semiconductor Products | TRANSISTOR RF FET 3.5GHZ NI360HF |
| MRFG35003NR5 | Digi-Key | Freescale Semiconductor | Discrete Semiconductor Products | TRANSISTOR RF 3W 12V POWER FET |
| MRFG35010AR1 | Digi-Key | Freescale Semiconductor | Discrete Semiconductor Products | TRANSISTOR RF FET 3.5GHZ NI360HF |
| MRFG35010R1 | Digi-Key | Freescale Semiconductor | Discrete Semiconductor Products | TRANSISTOR RF FET 3.5GHZ NI360HF |
Conduct Research
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High Linearity and Medium Power Applications Using the Avago's ATF-511P8 PHEMT-App Note
Avago Technologies ATF-511P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 41.3 dBm and a 1 dB compression point of 26 dBm, the ATF-511P8 is...(read more)
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M537: GaAs MMIC Based Control Components with Integral Drivers
This application note describes the fundamental operation and features of a new series of control components. These switches comprise a family of devices that use GaAs FET MMIC technology for the RF...(read more)
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AN423: Field Effect Transistor RF Amplifier Design Techniques yields: FET AMPLIFIER DESIGN 2 (0.4) (0.1) (? 2 ? 3.1 ? j2) b12 = (3.1)2 The two port parameter design method summarized above will now be discussed See Freescale Semiconductor, Inc. Information |
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RF Power RF Sensors CodeWarrior® Development Tools RF Power RF Industrial, Scientific and Medical Power Transistors See Freescale Semiconductor, Inc. Information |
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BF1100WR - Dual-gate MOS-FET from NXP Semiconductors The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation See NXP Information |
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Satellite LNB integrated solution from NXP Semiconductors Available as a satellite LNB (Low Noise Block) chipset the TFF1004HN downconverter with our UAF3000TS biasing IC and BFU725F transistor. See NXP Information |
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Fairchild Semiconductor - Site Search - Junction FET (JFET) Amplifiers (5) High Performance Multiplexer (2) High Performance Transistor (23) High Speed Logic Gate (22) HVIC (23) IEEE 1284 (3) IGBT Discrete See Fairchild Semiconductor Corporation Information |
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Avago Technologies Semiconductors Analog, Mixed-signal and... Dual Channel High Speed Transistor Four Channel High Speed Transistor Single Channel High Speed Transistor Optocouplers - Plastic See Avago Technologies Profile & Catalog |
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electronics tutorials for newcomers learn basic electronics... at Radio Frequencies - RF The Transistor Equivalent Circuit - Y Parameters - S Parameters - Understanding RF Transistor Data Sheets - Summary |
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Electronic Circuit Schematics Audio preamplifiers Colour (sound) organ Digital sample rate converter FET Audio mixer Graphic equaliser Guitar fuzz boxes Guitar phaser Headphone |
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A Nonlinear Electro-Thermal Scalable Model for High-Power RF... A Nonlinear Electro-Thermal Scalable Model for High-Power RF LDMOS Transistors |
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Characterization and Modeling of LDMOS Power FETs for RF Power... Integrated Circuits in RF Systems Conference Title: 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Item Title: |
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