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Products/Services for power rf transistor
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors
RF power dividers and RF power combiners are circuits that accept input signals and deliver multiple outputs that are equal in phase and amplitude. There are two basic product categories: passive and active. Search by Specification | Learn More about RF Power Dividers and RF Power Combiners
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors
RF diodes are designed to handle high-power radio frequency (RF) signals in stereo amplifiers, radio transmitters, television monitors, and other RF or microwave devices. Search by Specification | Learn More about RF Diodes
RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about Bipolar RF Transistors
RF generators and high frequency power supplies provide the power required for plasma generation, induction heating, and radar or communications applications. Search by Specification | Learn More about RF Generators
Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important. Search by Specification | Learn More about Power MOSFET
Power diodes are used mainly in high-power applications. They are built with large P-N junctions in order to pass large amounts of current and dissipate large amounts of heat. Search by Specification | Learn More about Power Diodes
RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude. Search by Specification | Learn More about RF Amplifiers
Gate drive transformers are used to drive high-speed switching devices such as field effect transistors (FET) and insulated gate bipolar transistors (IGBT). They are used in applications such as switching power supplies. Search by Specification | Learn More about Gate Drive Transformers
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Search by Specification | Learn More about Metal-oxide Semiconductor FET (MOSFET)
RF filters and microwave filters are devices that pass or reject signals by frequency. Basic types include bandpass filters, band reject filters, low pass filters, and high pass filters. Search by Specification | Learn More about RF Filters and Microwave Filters
RF limiters are circuits that prevent the amplitude of a waveform from exceeding a specified value. There are three basic types of RF limiters: conventional, feedback, and high power. Search by Specification | Learn More about RF Limiters
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Power RF Transistors - NPN or PNP Bipolar from AMS American Microsemiconductor, Inc.
Discontinued & Obsolete Electronic Parts by AMS American Microsemiconductor, Inc.
Discretes from Smith & Associates Smith & Associates
Transistor Kendu International Inc.
NPN and PNP Monolithic Dual Transistors Linear Integrated Systems, Inc.
TGF2021-04-SG & TGF2021-08-SG, 4GHz RF Transistors TriQuint Semiconductor, Inc.
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Product News for power rf transistor
Power RF Transistors - NPN or PNP Bipolar from AMS
NPN or PNP Bipolar RF Transistors.
If you have need of VHF Amplifiers (136-210 Mhz), American Microsemiconductor will support MHW607-1, -2, -3, and -4 types used primarily in portable hand held radios. (read more)
TGF2021-04-SG & TGF2021-08-SG, 4GHz RF Transistors
TriQuint's newest GaAs pHEMT discrete transistors, TGF2021-04-SG (4W) & TGF2021-08-SG (7W), are ideal for a variety of applications due to their versatility, offering either narrowband or wideband performance: 20 MHz to 4 GHz. (read more)
High Power RF Transmission Surge Protector
NexTek, Inc., the leading designer of best-in-class lightning protection and EMC / power conditioning products and services, announces the High RF Power K-Series designed for protecting high current RF transmission circuits. This new series of SurgeGuard™ lightning arrestors addresses the mission critical demands of high power RF applications in ranges from 0(dc) to 1000MHz. (read more)
200 Watt Class A Linear Power - RF Amplifier
3200L: 200 Watt Class A Linear power
The 3200L Amplifier is a rugged source of RF power, useful for RFI/EMI, HF and VHF transmitters, plasma equipment, nuclear accelerators and general laboratory applications. The 3200L represents E&I's commitment to providing RF power amplifiers of the highest quality, durability and ruggedness. (read more)
PowerBand™ has Redefined Wideband RF Technology
TriQuint Semiconductor has created a revolutionary new wideband, high power, RF transistor family for broadband applications including radar, signal jammers and wireless communications. (read more)
Bipolar Junction Transistor (BJT)
Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN transistor or PNP transistor. (read more)
A Flexible Dual-band WiMAX RF Front End Solution
Designers of mobile WiMAX/WiBRO systems face many challenges when designing and specifying the RF front end. There are issues with system power output, FCC regulations, power consumption, and interference with local cellular radios. Other issues are layout and design flexibility, and the potential need for custom modules. (read more)
AP30G120W-3 Insulated Gate Bipolar Transistor
The APEC series of fast Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses. The AP30G120W-3 is designed for applications such as Induction Heaters and Micro Ovens where high speed switching is a required feature. (read more)
Energy-harvesting powers wireless sensor networks
Jennic, a manufacturer of innovative 32-bit wireless microcontrollers and modules, announces a demonstration platform that successfully harvests thermal, solar, radio frequency (RF) and vibrational energy, to power wireless sensor networks based on the IEEE802.15.4 standard such as ZigBee PRO and 6LoWPAN. (read more)
RF Amplifier, High Power (ARJ109)
Cascadable amplifier, 1-250 MHz, offers over 1.0-Watt of output power (+28.5 dBm), 4.5 dB noise figure, 10.5 dB gain, and 17 dB reverse isolation; all typical. Typical intermodulation performance: 44 dBm IP3 and 75 dBm IP2. Operating at 15 volts nominal, the amp yields 235 mA DC Current. Comes standard in a 10-pin Gullwing package; contact the factory regarding other package options. (read more)
Parts by Number for power rf transistor
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| MRFG35003NR5 | Digi-Key | Freescale Semiconductor | Discrete Semiconductor Products | TRANSISTOR RF 3W 12V POWER FET |
| BLF6G10LS-135RN,11 | Digi-Key | NXP Semiconductors | Discrete Semiconductor Products | TRANSISTOR POWER LDMOS SOT502B |
| BLF6G10LS-200RN,11 | Digi-Key | NXP Semiconductors | Discrete Semiconductor Products | TRANSISTOR POWER LDMOS SOT502B |
| BLF6G10LS-160RN:11 | Digi-Key | NXP Semiconductors | Discrete Semiconductor Products | TRANSISTOR POWER LDMOS SOT502B |
| BLF6G20-180PN,112 | Digi-Key | NXP Semiconductors | Discrete Semiconductor Products | TRANSISTOR POWER LDMOS SOT539A |
Conduct Research
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AN721: Impedance Matching Networks Applied to RF Power Transistors, Courtesy of Motorola
Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer to high frequency power amplifiers. Although matching networks normally take the form of...(read more)
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Silicon RF Power MOSFETS
Silicon RF Power MOSFETS Providing general guidelines for understanding the design and operation of the transistors, this book describes the physics, design considerations and RF performance of...(read more)
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Non-RF Applications for the Surface Mount Schottky Diode Pairs -App Note
Schottky diodes, based on silicon or gallium arsenide substrates, are used in many receiver and transmitter circuits for mixing and detecting at frequencies up to 100 GHz. Today, advanced wafer and...(read more)
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Biasing MSA Series RF Integrated Circuits - App Note
Like discrete transistors, the MSA Series of RF Integrated Circuits can be operated at different bias points to achieve different performance results. These Monolithic Silicon Amplifiers have an...(read more)
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High Linearity and Medium Power Applications Using the Avago's ATF-511P8 PHEMT-App Note
Avago Technologies ATF-511P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 41.3 dBm and a 1 dB compression point of 26 dBm, the ATF-511P8 is...(read more)
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Trends in Microwave/Millimeter-Wave Front-End Technology
Unique, high-performance components are utilized between the air or fiber-optic media interface and baseband/digital signal processing functions. TriQuint and other suppliers have developed power...(read more)
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Low Distortion PIN Diode Switch Using Surface Mount Devices - App Note
One of the practical applications of the surface mounted PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is generally treated as a current...(read more)
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Cost-Effective Thin-Film Bulk Acoustic Resonator (FBAR) Production
Next-generation wireless communication devices depend on cost-effective, high-frequency components for 2.5G and 3G services. Device manufacturers need bandpass filters that are smaller, consume less...(read more)
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BLF177 - HF/VHF power MOS transistor from NXP Semiconductors SC19_RF_POWER_TRANS_CHAR_1; RF transmitting transistor and power amplifier fundamentals (1998-03-01) See NXP Information |
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BLF6G10-160RN; BLF6G10LS-160RN - Power LDMOS transistor from... BLF6G10-160RN; BLF6G10LS-160RN - Power LDMOS transistor See NXP Information |
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RF RF RF Power RF Industrial, Scientific and Medical Power Transistors RF Power Press Releases RF Power Events See Freescale Semiconductor, Inc. Information |
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RF Power Press Releases RF Power RF Industrial, Scientific and Medical Power Transistors RF LDMOS Power Transistors Mobile -- To 520 MHz See Freescale Semiconductor, Inc. Information |
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Richardson Electronics Ltd - HOME RF Transistors RF Power RF Power Transistor Bipolar/HBT RF Power Transistor GaAs RF Power Transistor GaN See Richardson Electronics, Ltd. Information |
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MOSFET - Wikipedia, the free encyclopedia It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. |
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Application Note 110 Fast IC Power Transistor with Thermal... Fast Fast IC Power Transistor National Semiconductor Application Note 110 IC with Thermal Protection April 1998 Power INTRODUCTION protective and See National Semiconductor Information |
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Linear and Switching Voltage Regulator Fundamentals (PDF) National Semiconductor Chester Simpson N Member of Technical Staff Power Management Applications Linear and Switching Voltage Regulator Fundamentals See National Semiconductor Information |
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Microsemi Power Products Group Microwave & RF Power Product Catalog RF Transistor Part Number Cross Reference See RF Globalnet Information |
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STMicroelectronics | High-power RF MOSFET targets VHF... High-power RF MOSFET targets VHF applications See STMicroelectronics, Inc. Information |
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