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Products/Services for pnp transistor analysis
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors
RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about Bipolar RF Transistors
Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two discrete transistors. Search by Specification | Learn More about Darlington Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals. Search by Specification | Learn More about Power Bipolar Transistors
Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More about Small-signal Bipolar Transistors (BJT)
Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching). Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors
...at which the switch may be turned on and off.Load configurations are also important parameters to consider. Proximity sensors may switch an AC load or a DC load. DC load configurations can be NPN or PNP. NPN is a transistor output that switches... Search by Specification | Learn More about Capacitive Proximity Sensors
...can be NPN or PNP or NAMUR. NPN is a transistor output that switches the common or negative voltage to the load; load connected between sensor output and positive voltage supply. PNP is a transistor output that switches the positive voltage... Search by Specification | Learn More about Eddy Current Proximity Sensors
Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More about Junction Field-Effect Transistors (JFET)
...package types for general purpose diodes include transistor outline (TO), diode outline (DO), small outline transistor (SOT), and small outline diode (SOD). Other general purpose diodes are available in a discrete package (DPAK) or in D2PAK, a large... Search by Specification | Learn More about General Purpose Diodes
Unijunction transistors (UJT) are three-terminal devices that exhibit a negative resistance characteristic. Search by Specification | Learn More about Unijunction Transistors (UJT)
Programmable uni-junction transistors (PUT) are three-terminal thyristors that are triggered into conduction when the voltage at the anode exceeds the voltage at the gate. The PUT is similar to the UJT, but its intrinsic standoff ratio can be set Search by Specification | Learn More about Programmable Unijunction Transistors (PUT)
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Discontinued & Obsolete Electronic Parts by AMS American Microsemiconductor, Inc.
Power RF Transistors - NPN or PNP Bipolar from AMS American Microsemiconductor, Inc.
Transistor Kendu International Inc.
Discretes from Smith & Associates Smith & Associates
New Split Tab DPAK for Dual MOSFETs Advanced Power Electronics Corp. USA
Advanced Power Electronics Corp goes Green Advanced Power Electronics Corp. USA
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Product News for pnp transistor analysis
NPN and PNP Monolithic Dual Transistors
LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Ideal for amplifier input applications seeking Low Offset(0.5 to 3mV), Low Drift, High Gain(400 beta), High Breakdown (25 to 60 Volts)and Low Capacitance(3pf). Replacement for Analog Device MAT01, MAT02 series and Intersil IT120, IT130 series. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)
Power RF Transistors - NPN or PNP Bipolar from AMS
NPN or PNP Bipolar RF Transistors.
If you have need of VHF Amplifiers (136-210 Mhz), American Microsemiconductor will support MHW607-1, -2, -3, and -4 types used primarily in portable hand held radios. (read more)
Bipolar Junction Transistor (BJT)
Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN transistor or PNP transistor. (read more)
Unijunction Transistors (UJT's) from AMS
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
AMS: Unijunction Transistor (UJT)
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
Programmable Unijunction Transistor known as PUT
(PUT) Programmable Unijunction Transistor from American Microsemiconductor, Inc.
Programmable Unijunction Transistor - The PUT is similar to standard Unijunction Transistor except that the breakdown or trigger voltage can be adjusted with external resistors. (read more)
Junction Field Effect Transistor J-FET from AMS
The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is a small change in input voltage causes a large change in output current. (read more)
TGF2021-04-SG & TGF2021-08-SG, 4GHz RF Transistors
TriQuint's newest GaAs pHEMT discrete transistors, TGF2021-04-SG (4W) & TGF2021-08-SG (7W), are ideal for a variety of applications due to their versatility, offering either narrowband or wideband performance: 20 MHz to 4 GHz. (read more)
Transistor
Bipolar Transistor:
SOT-523, SOT-323, SOT-363, SOT-23, SOT-89, SOT-223, SOT-252, SOT-263, SOT-92, SOT-92SP, SOT-251, SOT-126, SOT-126ML, SOT-220AB, SOT-230FP
Digital Transistor:
SOT-323, SOT-363, SOT-23, SOT-92, SOT-92SP (read more)
AP30G120W-3 Insulated Gate Bipolar Transistor
The APEC series of fast Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses. The AP30G120W-3 is designed for applications such as Induction Heaters and Micro Ovens where high speed switching is a required feature. (read more)
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Application Note 1148 Linear Regulators: Theory of Operation... See National Semiconductor Information |
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Application Note 74 LM139/LM239/LM339 A Quad of Independently... Transistors Q through Q make 1 4 Functioning up a PNP Darlington differential input stage with Q and Q 5 6 serving to give single-ended output from See National Semiconductor Information |
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NASA Parts Selection List (NPSL) - Transistors PNP Transistor, Silicon, 0.2-1.5 W Transistor, Silicon, Chopper, High Speed, 0.4 W |
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EEE Links Vol. 1, No. 3, Page 23 Relays Relay, Latching, DPDT 422, 18V Unknown 6224 Motorola Quad PNP Transistor MHQ2906 8930 6271 AEI Commutator 03-002-01 N/A 6307 Space Electronics |
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IBM Technical Journals Lateral pnp devices stressed under accelerated temperature and voltage conditions show a degradation in the transistor breakdown voltage. |
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A novel method for selective storage time control in... The method exploits the parasitic PNP transistor which is inherent in the basic diffused isolation structure of epitaxial integrated circuits. |
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Analysis of Parasitic PNP Bipolar Transistor Mitigation Using... Analysis of Parasitic PNP Bipolar Transistor Mitigation Using Well Contacts in 130 nm and 90 nm CMOS Technology |
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Investigation of InP/InGaAs pnp ?-doped heterojunction bipolar... Title: Investigation of InP/InGaAs pnp ?-doped heterojunction bipolar transistor with extremely low offset voltage Authors: Jung-Hui Tsai, Yu-Chi |
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MAX687, MAX688, MAX689 High-Accuracy, Low-Dropout Linear... an input-to-output voltage differential limited only by an external PNP transistor. See Maxim Integrated Products, Inc. Information |
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MAX6690 2°C Accurate Remote/Local Temperature Sensor with... See Maxim Integrated Products, Inc. Information |
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