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Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors
Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More about Small-signal Bipolar Transistors (BJT)
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals. Search by Specification | Learn More about Power Bipolar Transistors
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching). Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)
Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two discrete transistors. Search by Specification | Learn More about Darlington Transistors
General-purpose diodes are electric components that conduct electric current in only one direction, functioning similarly to a one-way valve. Search by Specification | Learn More about General Purpose Diodes
Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors
RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about Bipolar RF Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors
...voltage to appear at the output terminal. Control circuitry monitors the output voltage and adjusts the current source accordingly. Generally, the control circuitry contains a pass device such as pair of NPN transistors driven by a PNP transistor. NPN... Search by Specification | Learn More about IC Linear Voltage Regulators
Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More about Junction Field-Effect Transistors (JFET)
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors
...at which the switch may be turned on and off.Load configurations are also important parameters to consider. Proximity sensors may switch an AC load or a DC load. DC load configurations can be NPN or PNP. NPN is a transistor output that switches... Search by Specification | Learn More about Capacitive Proximity Sensors
...can be NPN or PNP or NAMUR. NPN is a transistor output that switches the common or negative voltage to the load; load connected between sensor output and positive voltage supply. PNP is a transistor output that switches the positive voltage... Search by Specification | Learn More about Eddy Current Proximity Sensors
Unijunction transistors (UJT) are three-terminal devices that exhibit a negative resistance characteristic. Search by Specification | Learn More about Unijunction Transistors (UJT)
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Transistor Kendu International Inc.
Discretes from Smith & Associates Smith & Associates
IRFB4127PbF with TrenchFET Gen 6 Technology Future Electronics
Transient Voltage Suppressor (TVS) American Microsemiconductor, Inc.
TGF2021-04-SG & TGF2021-08-SG, 4GHz RF Transistors TriQuint Semiconductor, Inc.
Parameter Searching American Microsemiconductor, Inc.
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LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Ideal for amplifier input applications seeking Low Offset(0.5 to 3mV), Low Drift, High Gain(400 beta), High Breakdown (25 to 60 Volts)and Low Capacitance(3pf). Replacement for Analog Device MAT01, MAT02 series and Intersil IT120, IT130 series. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)
NPN or PNP Bipolar RF Transistors.
If you have need of VHF Amplifiers (136-210 Mhz), American Microsemiconductor will support MHW607-1, -2, -3, and -4 types used primarily in portable hand held radios. (read more)
Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN transistor or PNP transistor. (read more)
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
(PUT) Programmable Unijunction Transistor from American Microsemiconductor, Inc.
Programmable Unijunction Transistor - The PUT is similar to standard Unijunction Transistor except that the breakdown or trigger voltage can be adjusted with external resistors. (read more)
The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is a small change in input voltage causes a large change in output current. (read more)
TriQuint's newest GaAs pHEMT discrete transistors, TGF2021-04-SG (4W) & TGF2021-08-SG (7W), are ideal for a variety of applications due to their versatility, offering either narrowband or wideband performance: 20 MHz to 4 GHz. (read more)
Bipolar Transistor:
SOT-523, SOT-323, SOT-363, SOT-23, SOT-89, SOT-223, SOT-252, SOT-263, SOT-92, SOT-92SP, SOT-251, SOT-126, SOT-126ML, SOT-220AB, SOT-230FP
Digital Transistor:
SOT-323, SOT-363, SOT-23, SOT-92, SOT-92SP (read more)
The APEC series of fast Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses. The AP30G120W-3 is designed for applications such as Induction Heaters and Micro Ovens where high speed switching is a required feature. (read more)
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| PNP POWER TRANSISTOR | netCOMPONENTS | Not Provided | Not Provided | Not Provided |
| PNP3055 | Newark | SEMELAB | All Supplier Direct Ship | TRANSISTOR, PNP, TO-3; Transistor Type:Bipolar; Voltage, Vceo:60V; Current, Ic Continuous a Max:15A; Voltage, Vce Sat Max:-1.1V; Power Dissipation:150W; Hfe, Min:20; ft, Typ:4MHz; Case Style:TO-3; Case Style, Alternate:TO-204AA; RoHS Compliant: Yes |
| TRANSISTOR PNP 2N2907A | netCOMPONENTS | Not Provided | Not Provided | Not Provided |
| TRANSISTOR, BIPOLAR, PNP, SOT- | Mectronic | MMBT3906 | Not Provided | MMBT3906 |
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PUMF11 - NPN resistor-equipped transistor; PNP general purpose... PUMF11 - NPN resistor-equipped transistor; PNP general purpose transistor See NXP Information |
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NXP Semiconductors 2PB709ART - 45 V, 100 mA PNP general-purpose transistor 2PB709ARL; 2PB709ASL - 45 V, 100 mA PNP general-purpose transistors 2PB710ARL; 2PB710ASL - 50 See NXP Information |
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MAT03S | Aerospace Low Noise, Matched Dual PNP Transistor |... MAT03S: Aerospace Low Noise, Matched Dual PNP Transistor See Analog Devices, Inc. Information |
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Fairchild Semiconductor - Site Search - Small Signal... FJV92MTF PNP Epitaxial Silicon Transistor PNP 30.0 2.0 KST2907A PNP Epitaxial Silicon Transistor See Fairchild Semiconductor Corporation Information |
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New Shopping Experience PNP EPITAXIAL SILICON TRANSISTOR TO-126 PNP EPITAXIAL SILICON TRANSISTOR TO-126 See Fairchild Semiconductor Corporation Information |
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Model PNP bipolar transistor using enhanced Ebers-Moll... PNP Bipolar Transistor - Model PNP bipolar transistor using enhanced Ebers-Moll equations See MathWorks, Inc. (The) Information |
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Transistor Circuits Types of transistor Transistor circuit symbols |
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PNP Transistors Derating Curves based on Temperature curves, PNP BJT Derating curves [below 2N2604 Derating curves, PNP Silicon Low Power Transistor ... 2N2604UB Derating curves, PNP Silicon Low Power |
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Transistor TRANSISTOR PAGE INDEX Select a transistor topic from the list below. Old Transistor Radios Transistor Links |
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Bipolarer Transistor (NPN PNP Aufbau Funktionsweise) NPN-Transistor PNP-Transistor Der NPN-Transistor besteht aus zwei n-leitenden Schichten. |