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RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors
RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about Bipolar RF Transistors
Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors
...package types for general purpose diodes include transistor outline (TO), diode outline (DO), small outline transistor (SOT), and small outline diode (SOD). Other general purpose diodes are available in a discrete package (DPAK) or in D2PAK, a large... Search by Specification | Learn More about General Purpose Diodes
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical Search by Specification | Learn More about Power Bipolar Transistors
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)
Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More about Small-signal Bipolar Transistors (BJT)
Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two Search by Specification | Learn More about Darlington Transistors
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts Search by Specification | Learn More about Metal-oxide Semiconductor FET (MOSFET)
RF diodes are designed to handle high-power radio frequency (RF) signals in stereo amplifiers, radio transmitters, television monitors, and other RF or microwave devices. Search by Specification | Learn More about RF Diodes
transistors (BJTs) and can be used in higher frequency applications where switching power losses are important. Search by Specification | Learn More about Power MOSFET
RF switches route radio frequency signals to particular waveguides. Search by Specification | Learn More about RF Switches
RF waveguide amplifiers accept a varying input signal and produce an output signal that varies in the same way, but with a larger amplitude. Learn More about RF Waveguide Amplifiers
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Power RF Transistors - NPN or PNP Bipolar from AMS American Microsemiconductor, Inc.
Discontinued & Obsolete Electronic Parts by AMS American Microsemiconductor, Inc.
Discretes from Smith & Associates Smith & Associates
Transistor Kendu International Inc.
NPN and PNP Monolithic Dual Transistors Linear Integrated Systems, Inc.
TGF2021-04-SG & TGF2021-08-SG, 4GHz RF Transistors TriQuint Semiconductor, Inc.
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NPN or PNP Bipolar RF Transistors.
If you have need of VHF Amplifiers (136-210 Mhz), American Microsemiconductor will support MHW607-1, -2, -3, and -4 types used primarily in portable hand held radios. (read more)
LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Ideal for amplifier input applications seeking Low Offset(0.5 to 3mV), Low Drift, High Gain(400 beta), High Breakdown (25 to 60 Volts)and Low Capacitance(3pf). Replacement for Analog Device MAT01, MAT02 series and Intersil IT120, IT130 series. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)
TriQuint's newest GaAs pHEMT discrete transistors, TGF2021-04-SG (4W) & TGF2021-08-SG (7W), are ideal for a variety of applications due to their versatility, offering either narrowband or wideband performance: 20 MHz to 4 GHz. (read more)
Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN transistor or PNP transistor. (read more)
Designers of mobile WiMAX/WiBRO systems face many challenges when designing and specifying the RF front end. There are issues with system power output, FCC regulations, power consumption, and interference with local cellular radios. Other issues are layout and design flexibility, and the potential need for custom modules. (read more)
TriQuint Semiconductor has created a revolutionary new wideband, high power, RF transistor family for broadband applications including radar, signal jammers and wireless communications. (read more)
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
Unijunction Transistor (UJT) from American Microsemiconductor.
The unijunction transistor (UJT) is a three terminal, single junction device with characteristics very different from the conventional 2 junction, bipolar transistor... (read more)
(PUT) Programmable Unijunction Transistor from American Microsemiconductor, Inc.
Programmable Unijunction Transistor - The PUT is similar to standard Unijunction Transistor except that the breakdown or trigger voltage can be adjusted with external resistors. (read more)
The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is a small change in input voltage causes a large change in output current. (read more)
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| AT/RF1 | AmericanMicroSemi | AMS | Transistors:Transistors:Bipolar:Ge PNP Low-Power:Bipolar:Ge PNP Low-Power | Transistors:Transistors:Bipolar:Ge PNP Low-Power:Bipolar:Ge PNP Low-Power |
| AT/RF2 | AmericanMicroSemi | AMS | Transistors:Transistors:Bipolar:Ge PNP Low-Power:Bipolar:Ge PNP Low-Power | Transistors:Transistors:Bipolar:Ge PNP Low-Power:Bipolar:Ge PNP Low-Power |
| HS1056RF | AmericanMicroSemi | AMS | Transistors:Transistors:Bipolar:Si PNP Power:Transistors:Bipolar:Si PNP Power | HS1056RF Transistors Transistors Bipolar Si PNP Power Transistors Bipolar Si PNP Power HS1056RF is on sale at our online store. Buy it for 7.69 or less. Call 973-377-9566 100% Satisfaction Gauranteed. FREE UPS ground shipping or more. Also get speci |
| BCW68RF | AmericanMicroSemi | AMS | Transistors:Transistors:Bipolar:Si PNP Low-Power:Bipolar:Si PNP Low-Power | Transistors:Transistors:Bipolar:Si PNP Low-Power:Bipolar:Si PNP Low-Power |
| 2SA1175RF | AmericanMicroSemi | AMS | Transistors:Transistors:Bipolar:Si PNP Low-Power:Bipolar:Si PNP Low-Power | Transistors:Transistors:Bipolar:Si PNP Low-Power:Bipolar:Si PNP Low-Power |
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Fairchild Semiconductor - Site Search - Small Signal... Amplifiers (5) High Performance Multiplexer (2) High Performance Transistor (23) High Speed Logic Gate (22) HVIC (23) IEEE 1284 (3) IGBT Discrete See Fairchild Semiconductor Corporation Information |
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Product Folder - MMBTH81 - PNP RF Transistor MMBTH81 PNP RF Transistor Related Links Request samples How to order PNP RF Transistor This device is designed See Fairchild Semiconductor Corporation Information |
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RF Amplifier Design Using HFA3046, HFA3096, TM HFA3127,... RF Amplifier Design Using HFA3046, HFA3096, TM HFA3127, HFA3128 Transistor Arrays Application Note November 1996 AN9315.1 Introduction HFA3046 See Intersil Corporation Information |
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RF Up/Down Conversion Is Simplified By Linear Arrays... FIGURE 1. DISCRETE TRANSISTOR AMPLIFIER purpose it will contain a block of NPN bipolar transistors, a The multistage transistor amplifier design See Intersil Corporation Information |
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Semiconductor: AF118 (AF 118) - TRANSISTOR GERMANIUM PNP /... English in ?: Semiconductor: AF118 (AF 118) - TRANSISTOR GERMANIUM PNP / RF-VIDEO 70V / 175MHz... |
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NXP Semiconductors matched double transistor BCM62B - PNP/PNP matched double transistor BCV61 - NPN general purpose double transistor BCV62 - PNP general purpose double See NXP Information |
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BSR12 - PNP switching transistor from NXP Semiconductors PNP switching transistor in a SOT23 plastic package. See NXP Information |
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A PNP triode alloy junction transistor for RF amplification A PNP triode alloy junction transistor for RF amplification |
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Manufacture Diodes, IGBTs, LED Driver, Small Signal & Analog,... PNP Dual Transistor PNP JFET PNP Quad Transistor NPN Transistor PNP Darlington Transistor See Microsemi Corp. Information |
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RF-Micom---Electronics Components RF Power Transistors Telecom Products Electronics Component PNP TRANSISTOR 10A 60V TIP34A TIP34B PNP TRANSISTOR 10A 80V |