Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical Search by Specification | Learn More about Power Bipolar Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors

Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors

Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More about Small-signal Bipolar Transistors (BJT)

Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More about Junction Field-Effect Transistors (JFET)

RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters Search by Specification | Learn More about Bipolar RF Transistors

RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors

Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two Search by Specification | Learn More about Darlington Transistors

Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors

...impedance differential inputs and high common-mode rejection. The differential gain can be adjusted by changing the value of a single resistor. Logarithmic amplifier chips (log amp chips) produce an output voltage that is directly proportional... Search by Specification | Learn More about Amplifier and Comparator Chips

Unijunction transistors (UJT) are three-terminal devices that exhibit a negative resistance characteristic. Search by Specification | Learn More about Unijunction Transistors (UJT)

Programmable uni-junction transistors (PUT) are three-terminal thyristors that are triggered into conduction when the voltage at the anode exceeds the voltage at the gate. The PUT is similar to the UJT, but its intrinsic standoff ratio can be set Search by Specification | Learn More about Programmable Unijunction Transistors (PUT)

...relationship between the closed-loop bandwidth, the amplifier bias current and the closed-loop gain. Like voltage-controlled current sources (VCCS), operational transconductance amplifiers (OTA) represent an ideal transistor. Because the variation... Learn More about Operational Transconductance Amplifiers (OTA)