RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about Bipolar RF Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors

Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals. Search by Specification | Learn More about Power Bipolar Transistors

Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors

Data acquisition output modules or cards transfer amplified, conditioned, or digitized signals. Search by Specification | Learn More about Data Acquisition Output Modules

Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More about Small-signal Bipolar Transistors (BJT)

Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two discrete transistors. Search by Specification | Learn More about Darlington Transistors

Voltage-to-frequency converter chips provide a signal frequency output as a function of an analog input voltage. Learn More about Voltage-to-Frequency Converter Chips

Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching). Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)

...at which the switch may be turned on and off.Load configurations are also important parameters to consider. Proximity sensors may switch an AC load or a DC load. DC load configurations can be NPN or PNP. NPN is a transistor output that switches... Search by Specification | Learn More about Capacitive Proximity Sensors

...can be NPN or PNP or NAMUR. NPN is a transistor output that switches the common or negative voltage to the load; load connected between sensor output and positive voltage supply. PNP is a transistor output that switches the positive voltage... Search by Specification | Learn More about Eddy Current Proximity Sensors

RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors

Integrated circuit (IC) linear voltage regulators use voltage-controlled sources to force a fixed voltage to appear at their output terminal. Search by Specification | Learn More about IC Linear Voltage Regulators

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts Search by Specification | Learn More about Metal-oxide Semiconductor FET (MOSFET)