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Product Alerts
Keep current on the latest products, new suppliers, and technical articles of interest to you. (See Topics) |
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Search by Specification | Learn More about Metal-oxide Semiconductor FET (MOSFET)
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important. Search by Specification | Learn More about Power MOSFET
DC motor drives act as the interface and power supply between a motion controller and a DC motor. Search by Specification | Learn More about DC Motor Drives
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors
Servo drives provide electrical drive outputs to servo motors in closed-loop motion control systems where position feedback and corrective signals optimize position and speed accuracy. Search by Specification | Learn More about Servo Drives
Adjustable speed drives alter the speed of a driven shaft to a speed selected by an operator. Search by Specification | Learn More about Adjustable Speed Drives
Motor controllers receive supply voltages and provide signals to motor drives that are interfaced to motors. They include a power supply, amplifier, user interface, and position control circuitry. Search by Specification | Learn More about Motor Controllers
Gate drivers are electronic circuits that apply correct power levels to metal-oxide field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). Search by Specification | Learn More about Gate Drivers
Belt drives are attached between a sprocket at the transmission output and a sprocket attached to the rear wheel. They require no lubrication, so they are one of the cleanest final drive systems. Learn More about Belt Drives
...stability in power amplifiers. An IGBT transistor combines MOSFET gate drive attributes with bipolar transistor high current and low saturation voltage capabilities. The insulated (or isolated) gate bipolar transistor (IGBT) transistor is typically used... Learn More about Specialty Transistors
AC motor drives interface controllers to AC motors. They match the control signals (voltage and power levels) as well as the signal type (analog or digital). They also provide power conversion, amplification, and the sequencing of waveform signals Search by Specification | Learn More about AC Motor Drives
Magnetic drive pumps are sealless pumps that use a coaxial magnetic coupling to transmit torque to an impeller. A standard electric motor drives a set of permanent magnets that are mounted on a carrier or drive assembly. Search by Specification | Learn More about Magnetic Drive Pumps
Hard drives are integral, non-volatile, electronic data storage units inside computers. Traditionally, hard drives were hard-wired into computers. Removeable hard disks and drives are also available. Search by Specification | Learn More about Hard Drives
Index drives are used to start and stop a table, conveyor or other equipment at precise intervals. Types of index drives include cam index drives, ring index drives, and roller gear index drives. Learn More about Index Drives
Instrument and computer (disk drive) power connectors are available in two basic styles. The larger size, often called a Molex connector, is keyed and used on most internal drives. The smaller size, a mini-plug, is used for newer style disk drives Learn More about Instrument and Computer (Disk Drive) Power Connectors
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IRFH7934TR2PBF N-channel 30V MOSFET Future Electronics
IRFS4620PBF HEXFET® power MOSFETs Future Electronics
Vishay Siliconix’s TrenchFET® Gen III Power MOSFET Mouser Electronics, Inc.
BiFET Amplifier (P Ch MOSFET Input & NPN Driver) Linear Integrated Systems, Inc.
Industries Broadest Range of Discrete-Components American Microsemiconductor, Inc.
CMOS Gate Arrays Universal Semiconductor, Inc.
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LS320 High Input Impedance, High Gain, Low Noise, BiFET Amplifier. Designed for High Impedance, Low Power applications in need of High Gain (30mS), and Femto Amp Leakage over a broad temperature range. It also provides Low Capacitance (1.5pf) and Low Noise (25uV). Direct Replacement for Amperex LTA-320. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)
The IRFS4620PBF is a 144W, 200V HEXFET® power MOSFETs with ultra low gate charge (Qg) for industrial applications including Switch Mode Power Supplies (SMPS), uninterruptable power supplies (UPS), inverters and DC motor drives. (read more)
NPN or PNP Bipolar RF Transistors.
If you have need of VHF Amplifiers (136-210 Mhz), American Microsemiconductor will support MHW607-1, -2, -3, and -4 types used primarily in portable hand held radios. (read more)
Advanced Power Electronics Corporation's expanding family of power MOSFETS now includes devices in the new SDPAK™, a RoHS-compliant halogen-free TO-252-4L package with a split tab allowing fully independent operation of dual MOSFETs in the popular D-PAK outline. Introduced 30V devices have Rds(on) from 6mohms through 18mohms, and one 40V device, at 13mohms. (read more)
Advanced Power Electronics Corporation's expanding family of power MOSFETS now includes devices in the new PMPak5x6, a RoHS-compliant 5mmx6mm package with a standard SO-8 footprint but offering improved thermal performance and on-resistance. Devices are currently available with Rds(on) down to under 2 mohms and are pin-compatible with other "power" SO-8 solutions in the marketplace. (read more)
LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Ideal for amplifier input applications seeking Low Offset(0.5 to 3mV), Low Drift, High Gain(400 beta), High Breakdown (25 to 60 Volts)and Low Capacitance(3pf). Replacement for Analog Device MAT01, MAT02 series and Intersil IT120, IT130 series. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)
The NexFET power MOSFET has been designed to minimize losses in power conversion and load management applications. The SON 2x2 offers excellent thermal performance for the size of the package. (read more)
Mouser Electronics, Inc., known for its rapid introduction of the newest products, today announced it is stocking Vishay Siliconix's TrenchFET Gen III Power MOSFETs. Vishay Siliconix transistors and ICs improve the efficiency of power management circuitry in end products while reducing space requirements. (read more)
Parker's new OFS (Open Frame Stepper) microstepping drives are an economical alternative to more expensive, full-featured, packaged AC powered step drives. For less-demanding, point-to-point applications, the OFS drives deliver all the performance required in a high-value, low-frills approach to motion control. (read more)
The IRFH7934 family of MOSFETs utilizes IR's proven silicon technology to deliver benchmark on-state resistance (RDS(on)) and improved switching performance (read more)
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Introduction to Power MOSFETs and Their Applications will always be a blocking PN junction When the gate is same function as NPN bipolar junction transistors except forward biased with respect to the See National Semiconductor Information |
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Application Note 1067 LM3641 Application Information Guide The IC turns OFF the MOSFET pair whenever any fault charger through R1 and the NPN. The collector of the PNP limit is exceeded. See National Semiconductor Information |
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A monolithic current limiting power MOSFET A monolithic current limiting power MOSFET |
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Enhancing the Gate-Drive Capacity of the DS39xx CCFL... Each gate driver can drive one logic-level MOSFET. The gate-driver output charge loading is 20nC maximum, and the high-level output voltage is See Maxim Integrated Products, Inc. Information |
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MOSFET Pass Element Yields 100mV-Dropout Regulator - Maxim drop across an NPN pass transistor is greater than VBE(SAT) (1.2V minimum) because regulator circuits generally provide no base-drive voltage higher See Maxim Integrated Products, Inc. Information |
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1 MCU open-drain pin to drive 4 NPN 1 MCU open-drain pin to drive 4 NPN EDAboard.com Forum Index -> Electronic Elementary Questions -> 1 MCU open-drain pin to drive 4 NPN |
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how to drive high side mosfet tags: fet drive high side drive high side mosfet high side fet drive high side fet mosfet high side high side mosfet drive fet high side drive |
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AN-7010 Choosing Power Switching Devices for SMPS Designs circuits, such as the full-bridge and FS drive of V = 10V, a desired di/dt = 600A/?sec and typical 1/ drive 2 bridge topologies where the IGBT See Fairchild Semiconductor Corporation Information |
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AN-9016 IGBT Basics 1 transistor, there is an NPN transistor, which is designed to be inactivated by shorting the base and the emitter to the MOSFET source metal. See Fairchild Semiconductor Corporation Information |
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Application Note APT0201 Rev. B July 1, 2002 IGBT Tutorial... The reason for this is that a MOSFET is NPN a majority carrier device only. See Microsemi Corp. Information |