|
|
|
Welcome to GlobalSpec - a trusted source for engineers and industrial professionals.
Search GlobalSpec to find junction diode-related products, suppliers, datasheets and CAD.
|
Product Alerts
Keep current on the latest products, new suppliers, and technical articles of interest to you. (See Topics) |
Diodes are electronic components that conduct electric current in only one direction, functioning as a one-way valve. Diodes are manufactured using semiconductor materials such as silicon, germanium or selenium and are used as voltage regulators, signal rectifiers, oscillators and signal modulators / demodulators. Search by Specification | Learn More about Diodes
General-purpose diodes are electric components that conduct electric current in only one direction, functioning similarly to a one-way valve. Search by Specification | Learn More about General Purpose Diodes
Zener diodes are PN junction devices that are designed to operate in the reverse-breakdown region. Search by Specification | Learn More about Zener Diodes
Diode arrays are composed of multiple discrete (usually unconnected) diodes on a single silicon chip. Diode arrays are important semiconductor products because they save assembly time and improve reliability over individually packaged diodes. In general, diode arrays use four or more diodes in a single package. Search by Specification | Learn More about Diode Arrays
High voltage diodes are designed for use in high-voltage applications. Search by Specification | Learn More about High Voltage Diodes
Light-emitting diodes (LED) are PN junction devices that give off light radiation when biased in the forward direction. LEDs are used in a wide variety of indication applications. Search by Specification | Learn More about Light Emitting Diodes (LED)
PIN diodes are three-layer semiconductor diodes consisting of an intrinsic layer separating heavily doped P and N layers. The charge stored in the intrinsic layer in conjunction with other diode parameters determines the resistance of the diode at RF and microwave frequencies. Search by Specification | Learn More about PIN Diodes
Diode lasers use light-emitting diodes to produce stimulated emissions in the form of coherent light output. They are also known as laser diodes. Search by Specification | Learn More about Diode Lasers
Transient voltage suppressor (TVS) diodes are designed to limit over-voltages. They can dissipate high amounts of transient power in a short period of time. Search by Specification | Learn More about Transient Voltage Suppressor Diodes (TVS)
RF diodes are designed to handle high-power radio frequency (RF) signals in stereo amplifiers, radio transmitters, television monitors, and other RF or microwave devices. Search by Specification | Learn More about RF Diodes
Current limiting diodes (CLD) regulate current over a wide voltage range. There are several types of current limiting diodes (CLD). Examples include a current regulator diode, constant current diode, and current limit diodes. Search by Specification | Learn More about Current Limiting Diodes
Gunn diodes or transfer electron devices (TED) exhibit a negative resistance region. They are used in high-frequency applications, often for building RF oscillators. Impact ionization avalanche transit-time (IMPATT) diodes are designed to operate at very high frequency and power. They are used as elements in RF and microwave devices. Search by Specification | Learn More about GUNN and IMPATT Diodes
Power diodes are used mainly in high-power applications. They are built with large P-N junctions in order to pass large amounts of current and dissipate large amounts of heat. Search by Specification | Learn More about Power Diodes
Tunnel diodes are heavily doped P-N diodes in which electron tunneling from the conduction band in the N-type material to the valence band in the P-type region produces a region of negative resistance. This negative-resistance region is the most important area of operation. As the voltage is increased, the current decreases. This feature makes tunneling diodes especially useful in oscillators and radio frequency (RF) applications. Search by Specification | Learn More about Tunnel Diodes
Varactor diodes are p-n junction diodes that are designed to act as a voltage controlled capacitance when operated under reverse bias. Search by Specification | Learn More about Varactor Diodes
|
|
||||||||
JAN-qualified diodes Aeroflex / Metelics
Silicon PIN Diodes: MELF Aeroflex / Metelics
AMS Has been supplying Germanium Diodes American Microsemiconductor, Inc.
Current Regulating Diodes - SMT and Thru-Hole Linear Integrated Systems, Inc.
35V and 200V PIN Diodes PanJit Touch Screen Solutions Division
Introducing Lead-free Plating PanJit Touch Screen Solutions Division
|
In this discussion the term diode and rectifier will be used interchangeably, a low current rectifier implies a diode,and a high current or power device, conducting from 1 to 1000 amps or even higher, a rectifier.... (read more)
A varicap diode, varactor diode,or tuning diode is a type of diode whose PN junction capacitance can be varied by varying the voltage across that junction. (read more)
American Microsemiconductor supplies tunnel diodes. Tunnel diodes have a negative resistance region that allows for very fast switching speeds, up to 5 GHz. (read more)
Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN transistor or PNP transistor. (read more)
Diode Arrays from American Microsemiconductor.
American Microsemiconductor Diode Arrays feature High breakdown Voltage, Low forward Voltage,fast switching and high reliability. (read more)
Jenoptik Laser Diode Group
RPMC Lasers has been chosen to distribute Jenoptik's diode lasers in the US. Jenoptik's laser diode group currently provides a wide portfolio including diode laser bars, vertical and horizontal stacks, CS and S-package bars and high-power fiber coupled modules. (read more)
This "Ultrafast Recovery" surface mount rectifier diode series is military qualified to MIL-PRF-19500/477. The JANTX1N5811 is ideal for high-reliability applications where a failure cannot be tolerated. (read more)
Diodes, Rectifiers, Diode Arrays, General Purpose Diodes, High-speed Diodes, Varistors and more from American Microsemiconductor, Inc. With over 17,000,000 electronic components sitting on our warehouse shelves we can almost guarantee that we've got the right part for the job! (read more)
Amphenol Industrial Operations introduces the Amphoton™ line of junction box assemblies for solar modules. With 13 box models and endless pole/diode configurations paired with our PoweLink™ or ArmorLink™ Cables and Helios™ H4 connectors we can meet any need for both Crystalline Silicone and Thin-Film applications
Amphoton PV-090731 series
Fe... (read more)
The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is a small change in input voltage causes a large change in output current. (read more)
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| NTE6358 | Newark | NTE ELECTRONICS | Rectifiers - Standard Recovery | Silicon Power Rectifier Diode; Forward Current Average:300A; Operating Temp. Max:180 C; Operating Temp. Min:-40 C; Repetitive Reverse Voltage Max, Vrrm:1000V; Thermal Resistance, Junction-Case:0.18K/W Rohs Compliant: Yes |
| LCDA15C-1.TCT | Newark | SEMTECH | TVS | TVS Diode; Stand-Off Voltage, VRWM:15V; Breakdown Voltage, Vbr:16.7V; Capacitance, Cd:8pF; Package/Case:SOT-143; Breakdown Voltage Min:16.7V; Junction Capacitance:15pF; Leaded Process Compatible:Yes; Mounting Type:Surface Mount RoHS Compliant: Yes |
| BAT54WFILM | Newark | STMICROELECTRONICS | Rectifiers - Schottky | Diode; Diode Type:Schottky; Junction Temperature, Tj max:150?C; Termination:SMD; Operating Temperature Range:-40?C to +150?C; Forward Surge Current Max, Ifsm:1A; Forward Voltage Max, VF:0.9V; Package/Case:SOD-323 RoHS Compliant: Yes |
| STPS200170TV1 | Newark | STMICROELECTRONICS | Rectifiers - Schottky | Diode; Diode Type:Schottky; Junction Temperature, Tj max:150?C; Forward Current Avg Rectified, IF(AV):100A; Forward Surge Current Max, Ifsm:700A; Forward Voltage Max, VF:0.63V; Package/Case:ISOTOP RoHS Compliant: Yes |
| NTE6356 | Newark | NTE ELECTRONICS | Rectifiers - Standard Recovery | Silicon Power Rectifier Diode; Forward Current Average:300A; Operating Temp. Max:180 C; Operating Temp. Min:-40 C; Repetitive Reverse Voltage Max, Vrrm:600V; Thermal Resistance, Junction-Case:0.18K/W Rohs Compliant: Yes |
|
1N_FDLL914-A-B-916-A-B-4148-4448 Rev B2.fm / 916/A/B / 4148 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914 BLACK BROWN See Digi-Key Corporation Profile & Catalog |
|
|
FDC796N 30V N-Channel PowerTrench? MOSFET ON-RESISTANCE 0.6 0.004 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. See Fairchild Semiconductor Corporation Information |
|
|
Model piecewise linear, piecewise linear zener, or exponential... The piecewise linear diode model is the same model found in the Simscape Diode block, with the addition of a fixed junction capacitance. See MathWorks, Inc. (The) Information |
|
|
Untitled Switches, TruTherm Technology, Hardware Health Monitors, Remote Diode Temperature Sensing, FPGA / CPU / uP / ASIC Temperature Sensing, Digital Temp |
|
|
Diode - ninemsn Encarta In electronics, a diode is a two-terminal P-N junction device (thermionic diodes may also have one or two ancillary terminals for a heater). Diodes |
|
|
Analog Devices : Analog Dialogue : ESD Temp Sensor The diode voltage vs. temperature can be characterized by placing the amplifier in a temperature chamber with a constant current applied to the ESD See Analog Devices, Inc. Information |
|
|
VR, Maximum D See Microsemi Corp. Information |
|
|
NXP Semiconductors PESD1CAN - CAN bus ESD protection diode PESD1FLEX - FlexRay bus ESD protection diode PESD2CAN - CAN bus ESD protection diode See NXP Information |
|
|
Freewheeling Diode Reverse Recovery Failure Modes in IGBT... Period) total charge on either side of the junction is the depletion By assuming an ideal switch the diode current drops at a layer charge Qd, which |
|
|
D: Diode Junction diode. 3.4.3 Comments N+ and n? are the positive and negative element nodes, respectively. |