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Keep current on the latest products, new suppliers, and technical articles of interest to you. (See Topics) |
Logic gates are electronic circuits that combine digital signals according to boolean algebra. Search by Specification | Learn More about Logic Gates
Gate drivers are electronic circuits that apply correct power levels to metal-oxide field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). Search by Specification | Learn More about Gate Drivers
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Search by Specification | Learn More about Metal-oxide Semiconductor FET (MOSFET)
Oxide ceramics include alumina, zirconia, silica, aluminum silicate, magnesia and other metal oxide based materials. Search by Specification | Learn More about Oxide Ceramics
Aluminum oxide and alumina ceramics have excellent wear characteristics, chemical resistance, compressive strength, high-temperature properties, and dielectric strength. Search by Specification | Learn More about Aluminum Oxide and Alumina Ceramics
...in finishing and deburring applications, while very fine grits are suitable for deburring. Abrasives and abrasive products use several different types of abrasive grains. Aluminum oxide, the most common industrial mineral in use today, is used either... Search by Specification | Learn More about Abrasives and Abrasive Products
Field-programmable gate arrays (FPGAs) have a different architecture than SPLDs and CPLDs, and typically offer higher capacities. FPGAs are also known as logic cell arrays (LCA) and programmable ASIC (pASIC). Search by Specification | Learn More about Field-programmable Gate Arrays (FPGA)
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)
Gate valves and knife valves are linear motion valves in which a flat closure element slides into the media stream to shut off flow. Search by Specification | Learn More about Gate Valves
Water control gates are used to control the mass flow of water or wastewater in various environmental and process applications. Learn More about Water Control Gates
Industrial safety gates control workers through openings in mezzanines, loading docks or other elevated work surfaces. This category includes flood control gates, guardrails and other devices to prevent personal or property damage. Learn More about Industrial Safety Gates
Entry gates are hinged partitions that allow access to designated areas. Learn More about Entry Gates
Metal oxide varistors (MOV) are semiconductors that protect electronic components and systems from transient voltages. Search by Specification | Learn More about Metal Oxide Varistors (MOVs)
Gate drive transformers are used to drive high-speed switching devices such as field effect transistors (FET) and insulated gate bipolar transistors (IGBT). They are used in applications such as switching power supplies. Search by Specification | Learn More about Gate Drive Transformers
Silicon controlled rectifiers (SCR) are four-layer (PNPN) thyristors with three terminals: an input control terminal (gate), an output terminal (anode), and a terminal common to both the input and output (cathode). SCRs are used mainly with high Search by Specification | Learn More about Silicon Controlled Rectifiers (SCR)
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Microchip Introduces High-Speed 45 nS Comparators Microchip Technology, Inc.
25-Bit Nonius Encoder iC-Haus Corporation
iC-MH 12 Bit Hall Angular Encoder iC-Haus Corporation
Fairchild FHP3194 Mouser Electronics, Inc.
MC100E157: 5V ECL Quad 2:1 Multiplexer ON Semiconductor L.L.C.
MC10H180: Dual 2-Bit Adder/Subtractor ON Semiconductor L.L.C.
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Skyspring Nanomaterials, Inc. provides an extensive array of nanopowders of oxides, surface coated oxides, rare earth oxides, and others. (read more)
Skyspring Nanomaterials, Inc. offers an extensive array of nanopowders of oxides and surface coated oxides for coatings. (read more)
CMOS arrays comprise a family of base wafers with a range of building blocks of circuits that have been tried and tested in silicon. (read more)
CMOS arrays comprise a family of base wafers with a range of building blocks of circuits that have been tried and tested in silicon. (read more)
Rogue Valley Microdevices offers Dry Thermal Oxide. Our ultra pure Dry Oxidation process is available for those applications requiring thinner oxides. We offer Chlorinated and Non-Clorinated Dry Thermal Oxide. Using Dry Chlorinated Thermal Oxide can help your devices perform to their highest potential by eliminating metal ions. (read more)
Through a unique manufacturing process, Simrit has created bonded gates for the semiconductor industry. In this process, seal profiles are bonded directly to process chamber gates, allowing for less seal movement and reducing contamination in process.
Simrit, the industrial sealing products division of Freudenberg-NOK, debuted its bonded gates during the SEMICON
(read more)
Simply forklift your pallet of material through the self closing safety gates and back away. The gates close up against your material effectively protecting the mezzanine edge until the material is loaded or the pallet is removed from the opening. Then the gates spring closed, all the time protecting the opening! (read more)
A variety of safety gates for light and heavy industrial applications. Ideal for stair openings, ladders and platforms. The "Save"-Ty Swing Gate is prefabricated and bolts to existing rail openings (read more)
Mezzanine Safety Gate
Clear Aisle Model
The Protect-O-Gate Clear Aisle is a revolutionary breakthrough for reducing the potential for falls and other accidents associated with mezzanine loading areas while taking up only 10" of aisle space
(read more)
| Part # | Distributor | Manufacturer | Product Category | Description |
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| 74HC10 | Newark | MCM | Tantalum&Niobium Oxide | Nand Gate, Channel: Triple, Number Of Inputs: 3 |
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MOSFET - Wikipedia, the free encyclopedia 7.2.2 Increased gate-oxide leakage 7.2.3 Increased junction leakage |
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Logic gate - Wikipedia, the free encyclopedia Logic gate From Wikipedia, the free encyclopedia |
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[No Title] Choline OH Poly Silicon Etch for Gate Oxide Punch Through and Gate Oxide Integrity Testing |
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IBM Technical Journals Reliability of SiO2 Gate Dielectric with Semi-Recessed Oxide Isolation |
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SEMI M51-0303 Test Method for Characterizing Silicon Wafer... |
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WP221 Static Power and the Importance of Realistic Junction... temperature, the leakage from gate to substrate is larger than the source-to-drain leakage in the 90 nm fast thin oxide transistors; however, unlike See Xilinx, Inc. Information |
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Xilinx, Power Consumption in 65nm FPGAs, white paper Gate Source Drain Gate Oxide - Varying Thicknesses on Die WP246_02_050206 Figure 2: Cross-Section of 65 nm Transistor Illustrating Triple Oxide See Xilinx, Inc. Information |
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Application of High- Gate Dielectrics and Metal Gate... Application of High- Gate Dielectrics and Metal Gate Electrodes to enable Silicon and Non-Silicon Logic Nanotechnology Robert Chau, Justin Brask, See Intel Corporation Information |
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Integrated CMOS Tri-Gate Transistors leakage (which increases with reducing gate length dimension) and gate oxide leakage (which increases with decreasing gate dielectric thickness) are See Intel Corporation Information |
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AN-310 High-Speed CMOS (MM74HC) Processing Passivation Oxide, Deposited Silicon Dioxide Over Entire Die Surface 3 www.fairchildsemi.com Silicon-Gate CMOS Processing Another origin of unwanted See Fairchild Semiconductor Corporation Information |