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Products/Services for gaas fet
...effect transistor (FET). They draw virtually no power from an input signal, overcoming a major disadvantage of the junction transistor. An n-channel FET consists of a bar (channel) of n-type semiconductor material that passes between and makes contact... Search by Specification | Learn More about Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Search by Specification | Learn More about Metal-oxide Semiconductor FET (MOSFET)
RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude. Search by Specification | Learn More about RF Amplifiers
...that consist of independent, isolated relays or field-effect transistor (FET) switches. They are designed to connect one input to one output. By contrast, multiplexers can connect one input to several outputs, or several inputs to one output. Matrix switches... Search by Specification | Learn More about VME, VPX and VXI Switches
...and generators include cross-bar switch technology (CBT), gallium arsenide (GaAs), integrated injection logic (I2L) and silicon on sapphire (SOS). Gunning with transceiver logic (GTL) and gunning with transceiver logic plus (GTLP) are also available... Search by Specification | Learn More about Parity Checkers and Generators
Material choices include silicon, germanium, GaAs, and SiGe. Choices for power MOSFET grade include commercial, industrial, and military. In a commercial transistor, the temperature range supported, and the mechanical and electrical... Search by Specification | Learn More about Power MOSFET
...is a silicon-germanium technology that combines the high speed of bipolar TTL with the low power consumption of CMOS. Other logic families for monostable multivibrators include cross-bar switch technology (CBT), gallium arsenide (GaAs), integrated... Search by Specification | Learn More about Monostable Multivibrators
...transistors (MOSFETs) to implement logic gates and other digital circuits. Other logic families for shift registers include cross-bar switch technology (CBT), gallium arsenide (GaAs), integrated injection logic (I2L), and Gunning with transceiver logic... Search by Specification | Learn More about Shift Registers
...switch technology (CBT), Gallium arsenide (GaAs), integrated injection logic (I2L) and silicon on sapphire (SOS). Gunning with transceiver logic (GTL) and gunning with transceiver logic plus (GTLP) are also available. Flip-flops are available... Search by Specification | Learn More about Flip-flops
Silicon (Si) and germanium (Ge), the most common electrical semiconductors, are used in many semiconductor components. Gallium arsenide (GaAs) and indium phosphide (InP) are examples of composite semiconductors that contain added materials or dopants... Learn More about Semiconductors and Semiconductor Materials
Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More about Junction Field-Effect Transistors (JFET)
...chips and silicon wafers for many different logic families. Examples include transistor-transistor logic (TTL), Fairchild Advanced Schottky TTL (FAST), emitter coupling logic (ECL), gallium arsenide (GaAs), indium phosphide (InP), silicon on sapphire... Search by Specification | Learn More about Semiconductor Foundry Services
...or FET switches. They can connect one input to one output. A multiplexer connects one input to several outputs, or several inputs to one output. A matrix switch is an arrangement with several inputs and several outputs. Any number of inputs can... Search by Specification | Learn More about CompactPCI Switches and PXI Switches
Laser protective eyewear includes glasses and goggles designed to filter out harmful radiation from lasers. Search by Specification | Learn More about Laser Protective Eyewear
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Discretes from Smith & Associates Smith & Associates
Transistor Kendu International Inc.
IRFB4127PbF with TrenchFET Gen 6 Technology Future Electronics
TGF2021-04-SG & TGF2021-08-SG, 4GHz RF Transistors TriQuint Semiconductor, Inc.
Parameter Searching American Microsemiconductor, Inc.
Transient Voltage Suppressor (TVS) American Microsemiconductor, Inc.
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Product News for gaas fet
1.0 -2.5 GHz 4W Amplifier Module
Stealth Microwave, a division of Micronetics, Inc., introduces a GaAs FET amplifier designed for various applications. The unit operates from 1.0 to 2.5 GHz with a P1dB of +36dBm. Small signal gain is 10dB with a flatness of ±0.5 dB across the band. Standard features include a single +12VDC Supply and Over/Reverse Voltage Protection. (read more)
Junction Field Effect Transistor J-FET from AMS
The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is a small change in input voltage causes a large change in output current. (read more)
High Speed (2ns), SMT, Quad, DMOS FET Switch
SD5400CY & SD5401CY : N-channel Enhancement Mode, Monolithic Quad, Surface Mount, Lateral DMOS Switch. Ideal for High Speed (2nS), Low Capacitance (0.5pf) Analog Switching Applications seeking improved accuracy, and throughput with less gliching or distortion. Direct Replacement for Siliconix and Calogic SD5400CY, SD5401CY, SD5000N, SD5001N, SD5000I Series. Instant Availability (read more)
High Speed (2ns), Single, DMOS FET Switch
SST210/SD210DE, SST211/SD211DE, SST213/SD213/DE, SST214/SD214DE, SST215/SD215DE : N-channel Enhancement Mode, Single, Lateral DMOS Switch. Ideal for High Speed (2nS), Low Capacitance (0.5pf) Analog Switching Applications seeking improved accuracy, and throughput with less gliching or distortion. Direct Replacements for Siliconix and Calogic. Instant Availability (read more)
TQBiHEMT GaAs Foundry Process
TQBiHEMT integrates E/D pHEMT and HBT onto a single chip, thus reducing part count, saving board space and improving overall system costs. This process, well suited for applications with high data rates and frequencies, offers high levels of integration and functionality to accommodate today's increasingly demanding applications. Click here for more information: http://www.tqs.com/prodserv/fo... (read more)
TQP13-N GaAs Foundry Process
Building high performance millimeter wave applications has never been more cost-effective. TQP13-N incorporates optical lithography to greatly reduce the cost of production relative to similar processes based on E-beam gate lithography. For more information, visit: http://www.tqs.com/prodserv/foundry/docs/TQP13-N.pdf (read more)
** GPS LNA FEM with Integrated Filters
The ALM-1712 is a GPS front-end module that combines a low-noise amplifier (LNA) with GPS FBAR filters.
The LNA uses Avago Technologies' proprietary GaAs Enhancement-mode pHEMT process to achieve high gain with very low noise figure and high linearity. (read more)
3.3 - 3.9GHz 1/2 Wtt High Linearity Amplifier
Avago Technologies' MGA-30316 is a high linearity ½ Watt PA with good OIP3 performance and exceptionally good PAE at p1dB gain compression point, achieved through the use of Avago Technologies' proprietary 0.25um GaAs Enhancement-mode pHEMT process. (read more)
Low Noise High Linearity Balanced Amplifier Module
ALM-1522 is a low noise, high gain and high linearity balanced amplifier module operating in the 700MHz to 1100MHz frequency range. (read more)
A Flexible Dual-band WiMAX RF Front End Solution
Designers of mobile WiMAX/WiBRO systems face many challenges when designing and specifying the RF front end. There are issues with system power output, FCC regulations, power consumption, and interference with local cellular radios. Other issues are layout and design flexibility, and the potential need for custom modules. (read more)
Parts by Number for gaas fet
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| KGF1256 GAAS FET | netCOMPONENTS | Not Provided | Not Provided | Not Provided |
| BSS84FET-GAAS | netCOMPONENTS | Not Provided | Not Provided | Not Provided |
| FLC167WF | AmericanMicroSemi | AMS | Other | GAAS FET |
| CLY5 | Digi-Key | Triquint Semiconductor Inc | Discrete Semiconductor Products | IC GAAS FET 26.5DBM SOT223-4 |
Conduct Research
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S2079: Drivers for GaAs FET Switches and Digital Attenuators
Many of M/A-COM's GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This...(read more)
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M539: Drivers for GaAs FET MMIC Switches and Digital Attenuators
M/A-COM's Microelectronics Division produces a silicon CMOS Application Specific Integrated Circuit (ASIC) that drives GaAs Field Effect Transistor (FET) based switches or digital attenuators from a...(read more)
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M521: Positive Voltage Control of GaAs MMIC Control Devices
GaAs control devices have seen a tremendous growth in recent years with M/A-COM being the market leader in this area. The fact that these devices are negative voltage controlled devices has precluded...(read more)
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M524: Suggested Circuit Controller for a Dual-Control FET VVA in AGC Temp Comp
This application note describes a useful broadband technique of temperature compensation for GaAs FET amplifiers. A control circuit is given for use with M/A-COM's dual bias 20 dB attenuator MMIC....(read more)
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M537: GaAs MMIC Based Control Components with Integral Drivers
This application note describes the fundamental operation and features of a new series of control components. These switches comprise a family of devices that use GaAs FET MMIC technology for the RF...(read more)
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1.9 GHz Downconverter for Cellular Infrastructure Application with Integrated IF Amplifier - App Note
Modern digital communication systems impose the requirement for high linearity on receivers. Superheterrodyne receivers with high Input IP3 often require the use of mixer with high IP3. Although...(read more)
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MGA-62563 High Performance GaAs MMIC Amplifier -App Note
The MGA-62563 is a high performance GaAs MMIC amplifier fabricated with Avago Technologies E-pHEMT process and is targeted for commercial wireless application from 100 MHz to 3 GHz. The MGA-62563 runs...(read more)
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Using the TC1142 for Biasing a GaAs Power Amplifier
RF bandwidths for cellular systems such as AMPS, TACS, GSM, TDMA, and CDMA range from 800MHz to 1.0GHz. To provide RF transmissions over this range of frequencies, Gallium Arsenide (GaAs) has become...(read more)
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TA047: High Voltage, Low Cost FETs for HPA MMIC Applications
M/A-COM is a longtime supplier to the military, Navy, Army and Air Force of GaAs MMICs, employed in active phased array radars. To date, the company's GaAs process of choice has been its Multifunction...(read more)
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Gaas Fet Gaas Fet Advertisers Sponsors Top Articles |
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Low Noise GaAs FET, HBT, HJ-FET | Discrete | Product... Low Noise GaAs FET, HBT, HJ-FET Contact information for inquiries, GaAs, HJ-FET - - - - - 2 10 20000 See NEC Electronics, Inc. Information |
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GaAs FET GaAs FET Compare and research GaAs FET companies and businesses online. Microwaves & RF Online Product Data Directory Amplifiers GaAs FET |
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GaAs FET MESFET :: Radio-Electronics.Com GaAs FET MESFET - overview or tutorial about the basics and essential details of the GaAs Fet or GaAs FET / MESFET Junction FET or JFET |
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Avago GaAs FET, PHEMT technology GaAs FET, PHEMT Technology Silicon Bipolar GaAs Amplifiers, Mixers, Switches Silicon Amplifiers, Gain Blocks See Avago Technologies Profile & Catalog |
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Design of an 8x8 Non-Blocking Crosspoint Switch in GaAs... Design of an 8x8 Non-Blocking Crosspoint Switch in GaAs Two-Phase Dynamic FET Logic See Storming Media LLC Information |
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Microwave Products - Toshiba America Electronic Components,... Toshiba Expands Frequency Ranges Of 9W And 30W Extended Ku-Band GaAs FET Lines For VSAT Satellite Communications |
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A GaAs Bi-FET technology for large scale integration A GaAs Bi-FET technology for large scale integration |
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Temperature compensation technique of GaAs FET by rotating the... Temperature compensation technique of GaAs FET by rotating the gate orientation |
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DC - 6000 MHz See Freescale Semiconductor, Inc. Information |
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