Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More about Junction Field-Effect Transistors (JFET)

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors

Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors

Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important. Search by Specification | Learn More about Power MOSFET

Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals. Search by Specification | Learn More about Power Bipolar Transistors

Gate drivers are electronic circuits that apply correct power levels to metal-oxide field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). Search by Specification | Learn More about Gate Drivers

Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching). Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)

Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More about Small-signal Bipolar Transistors (BJT)

RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about Bipolar RF Transistors

RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors

...that consist of independent, isolated relays or field-effect transistor (FET) switches. They are designed to connect one input to one output. By contrast, multiplexers can connect one input to several outputs, or several inputs to one output. Matrix switches... Search by Specification | Learn More about VME, VPX and VXI Switches

Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two Search by Specification | Learn More about Darlington Transistors

Unijunction transistors (UJT) are three-terminal devices that exhibit a negative resistance characteristic. Search by Specification | Learn More about Unijunction Transistors (UJT)