Diode lasers use light-emitting diodes to produce stimulated emissions in the form of coherent light output. They are also known as laser diodes. Search by Specification | Learn More about Diode Lasers

Diode arrays are composed of multiple discrete (usually unconnected) diodes on a single silicon chip. Diode arrays are important semiconductor products because they save assembly time and improve reliability over individually packaged diodes. In general, diode arrays use four or more diodes in a single package. Search by Specification | Learn More about Diode Arrays

High voltage diodes are designed for use in high-voltage applications. Search by Specification | Learn More about High Voltage Diodes

Logic gates are electronic circuits that combine digital signals according to boolean algebra. Search by Specification | Learn More about Logic Gates

Light-emitting diodes (LED) are PN junction devices that give off light radiation when biased in the forward direction. LEDs are used in a wide variety of indication applications. Search by Specification | Learn More about Light Emitting Diodes (LED)

Diodes are electronic components that conduct electric current in only one direction, functioning as a one-way valve. Diodes are manufactured using semiconductor materials such as silicon, germanium or selenium and are used as voltage regulators, signal rectifiers, oscillators and signal modulators / demodulators. Search by Specification | Learn More about Diodes

Silicon controlled rectifiers (SCR) are four-layer (PNPN) thyristors with three terminals: an input control terminal (gate), an output terminal (anode), and a terminal common to both the input and output (cathode). SCRs are used mainly with high voltages and currents, often to control alternating current (AC) where the change of sign causes the device to switch off automatically. Search by Specification | Learn More about Silicon Controlled Rectifiers (SCR)

Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching). Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)

Transient voltage suppressor (TVS) diodes are designed to limit over-voltages. They can dissipate high amounts of transient power in a short period of time. Search by Specification | Learn More about Transient Voltage Suppressor Diodes (TVS)

RF diodes are designed to handle high-power radio frequency (RF) signals in stereo amplifiers, radio transmitters, television monitors, and other RF or microwave devices. Search by Specification | Learn More about RF Diodes

Gunn diodes or transfer electron devices (TED) exhibit a negative resistance region. They are used in high-frequency applications, often for building RF oscillators. Impact ionization avalanche transit-time (IMPATT) diodes are designed to operate at very high frequency and power. They are used as elements in RF and microwave devices. Search by Specification | Learn More about GUNN and IMPATT Diodes

PIN diodes are three-layer semiconductor diodes consisting of an intrinsic layer separating heavily doped P and N layers. The charge stored in the intrinsic layer in conjunction with other diode parameters determines the resistance of the diode at RF and microwave frequencies. Search by Specification | Learn More about PIN Diodes

General-purpose diodes are electric components that conduct electric current in only one direction, functioning similarly to a one-way valve. Search by Specification | Learn More about General Purpose Diodes

Power diodes are used mainly in high-power applications. They are built with large P-N junctions in order to pass large amounts of current and dissipate large amounts of heat. Search by Specification | Learn More about Power Diodes