Gate turn-off thyristors (GTOs) are four-layer PNPN devices that act as switches, rectifiers, and voltage regulators. Like other thyristors, GTOs can be turned on by the application of a positive gate signal (g > 0); however, unlike other more conventional devices that can be turned off only at a zero crossing of current, GTOs can be turned off at any time by the application of a gate signal equal to zero. Search by Specification | Learn More about Gate Turn-off (GTO) Thyristors

Silicon controlled rectifiers (SCR) are four-layer (PNPN) thyristors with three terminals: an input control terminal (gate), an output terminal (anode), and a terminal common to both the input and output (cathode). SCRs are used mainly with high voltages and currents, often to control alternating current (AC) where the change of sign causes the device to switch off automatically. Search by Specification | Learn More about Silicon Controlled Rectifiers (SCR)

Triacs are three-terminal silicon devices that are configured in an inverse parallel arrangement to provide load current during both halves of the AC supply voltage. They are often used to control motor speed. Search by Specification | Learn More about Triacs

Diacs are bi-directional diodes that switch AC voltages and trigger silicon controlled rectifiers (SCRs) and triacs. Except for a small leakage current, diacs do not conduct until the breakover voltage is reached. Search by Specification | Learn More about Diacs

Thyristor surge suppressors are semiconductor chips used to protect circuits and devices from over-voltage and over-current. Search by Specification | Learn More about Thyristor Surge Suppressors

Specialty thyristors are specialty or proprietary products and accessories related to thyristors. Learn More about Specialty Thyristors

Quadracs are a special type of thyristor which combines a diac and a triac in a single package. The diac is the triggering device for the triac. Search by Specification | Learn More about Quadracs

Programmable uni-junction transistors (PUT) are three-terminal thyristors that are triggered into conduction when the voltage at the anode exceeds the voltage at the gate. The PUT is similar to the UJT, but its intrinsic standoff ratio can be set by two external resistors. Hence, the term "programmable" is used. Search by Specification | Learn More about Programmable Unijunction Transistors (PUT)

Unijunction transistors (UJT) are three-terminal devices that exhibit a negative resistance characteristic. Search by Specification | Learn More about Unijunction Transistors (UJT)

Sidacs are bidirectional silicon switches that provide greater power handling capabilities than standard diacs. These four-layer (PNPN) semiconductor devices are triggered by thyristors and act as open circuits that are capable of withstanding Search by Specification | Learn More about Sidacs

Resistors and potentiometers are passive electronic components that oppose the flow of either alternating current (AC) or direct current (DC). Search by Specification | Learn More about Resistors and Potentiometers

...tubes are very slow, but can handle very large surges. Surge suppressors may use silicon avalanche diodes, silicon thyristor diodes, or hybrid technologies instead of MOVs or gas tubes. Silicon avalanche diodes have high clamping voltages... Search by Specification | Learn More about Surge Suppressors

Power transformers convert power-level voltages from one level or phase configuration to another. They can include features for electrical isolation, power distribution, and control and instrumentation applications. Search by Specification | Learn More about Power Transformers

...surge suppressors: metal oxide varistor (MOV), silicon avalanche diode, silicon thyristor diode, gas tube, and hybrid. MOVs have high-energy capabilities, good reliability, and consistent performance. Silicon avalanche diodes are used most often... Search by Specification | Learn More about Three Phase Surge Suppressors